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CAT28C512

ON Semiconductor

512K-Bit CMOS PARALLEL EEPROM

CAT28C512/513 512K-Bit CMOS PARALLEL EEPROM FEATURES s Fast Read Access Times: 120/150 ns s Low Power CMOS Dissipation:...


ON Semiconductor

CAT28C512

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Description
CAT28C512/513 512K-Bit CMOS PARALLEL EEPROM FEATURES s Fast Read Access Times: 120/150 ns s Low Power CMOS Dissipation: s Automatic Page Write Operation: –Active: 50 mA Max. –Standby: 200 µA Max. s Simple Write Operation: –1 to 128 Bytes in 5ms –Page Load Timer s End of Write Detection: –On-Chip Address and Data Latches –Self-Timed Write Cycle with Auto-Clear s Fast Write Cycle Time: –Toggle Bit –DATA Polling s Hardware and Software Write Protection s 100,000 Program/Erase Cycles s 100 Year Data Retention s Commercial, Industrial and Automotive –5ms Max s CMOS and TTL Compatible I/O Temperature Ranges DESCRIPTION The CAT28C512/513 is a fast,low power, 5V-only CMOS parallel EEPROM organized as 64K x 8-bits. It requires a simple interface for in-system programming. On-chip address and data latches, self-timed write cycle with auto-clear and VCC power up/down write protection eliminate additional timing and protection hardware. DATA Polling and Toggle status bits signal the start and end of the self-timed write cycle. Additionally, the CAT28C512/513 features hardware and software write protection. The CAT28C512/513 is manufactured using Catalyst’s advanced CMOS floating gate technology. It is designed to endure 100,000 program/erase cycles and has a data retention of 100 years. The device is available in JEDEC approved 32-pin DIP, PLCC and TSOP packages. BLOCK DIAGRAM ADDR. BUFFER & LATCHES INADVERTENT WRITE PROTECTION ROW DECODER 65,536 x 8 EEPROM ARRAY 128 BYTE PAGE R...




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