Signal MOSFET. WNM2021 Datasheet


WNM2021 MOSFET. Datasheet pdf. Equivalent


Part Number

WNM2021

Description

N-Channel Small Signal MOSFET

Manufacture

Will Semiconductor

Total Page 6 Pages
Datasheet
Download WNM2021 Datasheet


WNM2021
WNM2021
N-Channel, 20V, 0.89A, Small Signal MOSFET
VDS (V)
20
Rds(on) ()
0.220@ VGS=4.5V
0.260@ VGS=2.5V
0.320@ VGS=1.8V
ID (A)
0.55
0.45
0.35
Descriptions
The WNM2021 is N-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use in
DC-DC conversion, load switch and level shift.
Standard Product WNM2021 is Pb-free.
Features
z Trench Technology
z Supper high density cell design
z Excellent ON resistance
z Extremely Low Threshold Voltage
z Small package SOT-323
WNM2021
Http//:www.willsemi.com
SOT-323
D
3
12
GS
Pin configuration (Top view)
3
21*
12
21 = Device Code
* = Month (A~Z)
Marking
Applications
z DC-DC converter circuit
z Small Signal Switch
z Load Switch
z Level Shift
z
Order information
Device
WNM2021-3/TR
Package
SOT-323
Shipping
3000/Reel&Tape
Will Semiconductor Ltd. 1 Dec, 2010 - Rev.1.0

WNM2021
Absolute Maximum ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Maximum Power Dissipation a
Continuous Drain Current b
Maximum Power Dissipation b
Pulsed Drain Current c
Operating Junction Temperature
Lead Temperature
Storage Temperature Range
WNM2021
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
Symbol
VDS
VGS
ID
PD
ID
PD
IDM
TJ
TL
Tstg
10 S Steady State
20
±6
0.89
0.82
0.71
0.65
0.37
0.31
0.23
0.20
0.78
0.70
0.62
0.56
0.29
0.23
0.18
0.14
1.4
150
260
-55 to 150
Unit
V
A
W
A
W
A
°C
°C
°C
Thermal resistance ratings
Parameter
Junction-to-Ambient Thermal Resistance a t 10 s
Steady State
Junction-to-Ambient Thermal Resistance b t 10 s
Steady State
Junction-to-Case Thermal Resistance
Steady State
Symbol
RθJA
RθJA
RθJC
Typical
275
325
375
445
260
Maximum
335
395
430
535
300
Unit
°C/W
a Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper
b Surface mounted on FR4 board using minimum pad size, 1oz copper
c Repetitive rating, pulse width limited by junction temperature, tp=10µs, Duty Cycle=1%
d Repetitive rating, pulse width limited by junction temperature TJ=150°C.
Will Semiconductor Ltd. 2 Dec, 2010 - Rev.1.0


Features WNM2021 WNM2021 N-Channel, 20V, 0.89A, S mall Signal MOSFET VDS (V) 20 Rds(on) ( Ω) 0.220@ VGS=4.5V 0.260@ VGS=2.5V 0. 320@ VGS=1.8V ID (A) 0.55 0.45 0.35 SOT -323 Http//:www.willsemi.com Descripti ons The WNM2021 is N-Channel enhancemen t MOS Field Effect Transistor. Uses adv anced trench (ON) D 3 technology and design to provide excellent RDS with l ow gate charge. This device is suitable for use in DC-DC conversion, load swit ch and level shift. Standard Product WN M2021 is Pb-free. 1 G 2 S Pin configur ation (Top view) Features z z z z z Tr ench Technology Supper high density cel l design Excellent ON resistance Extrem ely Low Threshold Voltage Small package SOT-323 * 1 3 21* 2 21 = Device Code = Month (A~Z) Marking Applications De vice Order information Package SOT-323 Shipping 3000/Reel&Tape z z z z z DC -DC converter circuit Small Signal Swit ch Load Switch Level Shift WNM2021-3/T R Will Semiconductor Ltd. 1 Dec, 201 0 - Rev.1.0 WNM2021 Absolute Maximum ratings Parameter Drain-Sou.
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