WNM2024

Product specification WNM2024 Single N-Channel, 20V, 3.9A, Power MOSFET VDS (V) 20 Rds(on) (Ω) 0.027@ VGS=4.5V 0.031@ VGS=2.5V 0.036@ VGS=1.8V SOT-23 Descriptions D The WNM2024 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench (ON) 3 technology and design to provide excellent RDS with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM2024 is Pb-free. 1 G 2 S Pin configuration (Top view) Features z z z z z Trench Technology Supper high density cell design 1 3 W24* 2 Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package SOT-23 Marking W24 = Device Code * = Month (A~Z) Applications z z z z z Driver for Relay, Solenoid, Motor, LED etc. DC-DC converter circuit Power Switch Load Switch Charging Device Order information Package SOT-23 Shipping 3000/Reel&Tape WNM2024-3/TR http://www.twtysemi.com sales@twtysemi.com 1 of 3 Product specification Absolute Maximum ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Maximum Power Dissipation a Continuous Drain Current b Maximum Power Dissipation b Pulsed Drain Current c Operating Junction Temperature Lead Temperature Storage Temperature Range TA=25°C TA=70°C TA=25°C TA=70°C TA=25°C TA=70°C TA=25°C TA=70°C Symbol VDS VGS ID PD ID PD IDM TJ TL Tstg 3.9 3.1 0.8 0.5 3.6 2.8 0.7 0.4 15 150 260 -55 to 150 WNM2024 10 S Steady State 20 Unit V ±8 3.6 2.9 0.7 ...