Product specification
WNM2027
N-Channel, 20V, 3.6A, Power MOSFET
V(BR)DSS
Rds(on) (Max. m) 45 @ 4.5V 55 @ 2.5V 66 @ ...
Product specification
WNM2027
N-Channel, 20V, 3.6A, Power MOSFET
V(BR)DSS
Rds(on) (Max. m) 45 @ 4.5V 55 @ 2.5V 66 @ 1.8V
Id (A) 3.6 3.1 1.5 SOT-23
20
Descriptions
The WNM2027 is N-Channel enhancement MOS Field Effect
Transistor. Uses advanced trench technology and design to provide excellent RDS
(ON)
D 3
with low gate 1 G 2 S
charge. This device is suitable for use in DC-DC conversion and power switch applications. Standard Product WNM2027 is Pb-free.
Configuration (Top View)
Features
3 z z z z z Trench Technology Supper high density cell design Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package SOT-23 1 WT6 * 2 = Device Code = Month (A~Z) Marking WT6*
Applications
z z z z Driver for Relay, Solenoid, Motor, LED etc. DC-DC converter circuit Power Switch Load Switch Device
Order Information
Package SOT-23 Shipping 3000/Tape&Reel
WNM2027-3/TR
http://www.twtysemi.com
[email protected]
1 of 3
Product specification
WNM2027
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Maximum Power Dissipation a Continuous Drain Current (TJ = 150 °C)b Maximum Power Dissipation b Pulsed Drain Current c Operating Junction and Storage Temperature Range TA=25°C TA=70°C TA=25°C TA=70°C TA=25°C TA=70°C TA=25°C TA=70°C Symbol VDS VGS ID PD ID PD IDM TJ, Tstg
3.2 2.5 0.8 0.5 2.9 2.3 0.6 0.4 10 -55 to 150
10 S
Steady State 20
±8 2.9 2.3 0.7 ...
