Product specification
WNM2034
N-Channel, 20V, 3.6A, Power MOSFET
VDS (V) 20
Rdson (ȍ) 0.037 @ 10V 0.045 @ 4.5V
Descr...
Product specification
WNM2034
N-Channel, 20V, 3.6A, Power MOSFET
VDS (V) 20
Rdson (ȍ) 0.037 @ 10V 0.045 @ 4.5V
Descriptions
The WNM2034 is N-Channel enhancement MOS Field Effect
Transistor. Uses advanced trench technology and design to provide excellent RDS
(ON)
SOT-23 D 3
with low gate
charge. This device is suitable for use in DC-DC conversion and power switch applications. Standard Product WNM2034 is Pb-free. 1 G 2 S
Features
z z z z z Trench Technology Supper high density cell design Excellent ON resistance for higher DC current Extremely Low Threshold Voltage Small package SOT-23
Configuration (Top View)
W34*
W34 *
= Device Code = Month (A~Z) Marking
Applications
z z z z Driver for Relay, Solenoid, Motor, LED etc.
Order Information
DC-DC converter circuit Power Switch Load Switch Device WNM2034-3/TR Package SOT-23 Shipping 3000/Tape&Reel
http://www.twtysemi.com
[email protected]
1 of 3
Product specification
WNM2034
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Maximum Power Dissipation a Continuous Drain Current (TJ = 150 °C)b
b
Symbol
VDS VGS TA=25°C TA=70°C TA=25°C TA=70°C TA=25°C TA=70°C TA=25°C TA=70°C ID
10 S
Steady State
20 ±12
Unit
V
3.6 2.8 0.8 0.5 3.2 2.6 0.6 0.4 10 -55 to 150
3.3 2.6 0.7 0.4 3 2.4 0.5 0.3
A
PD
W
ID
A
Maximum Power Dissipation Pulsed Drain Current c
PD IDM TJ, Tstg
W A °C
Operating Junction and Storage Tempe...