Document
Ordering number:EN1068C
NPN Triple Diffused Planar Silicon Transistor
2SC3149
800V/1.5A Switching Regulator Applications
Features
· High breakdown voltage (VCBO≥900V). · Fast switching speed. · Wide ASO.
Package Dimensions
unit:mm 2010C
[2SC3149]
JEDEC : TO-220AB EIAJ : SC-46
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg
Tc=25˚C PW≤300µs, Duty Cycle≤10%
1 : Base 2 : Collector 3 : Emitter
Conditions
Ratings 900 800 7 1.5 5 0.8 40 150 –55 to +150
Unit V V V A A A W
˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE1 hFE2 fT Cob VCB=800V, IE=0 VEB=5V, IC=0 VCE=5V, IC=0.1A VCE=5V, IC=0.5A VCE=10V, IC=0.1A VCB=10V, f=1MHz 10* 8 15 30 MHz pF Conditions Ratings min typ max 10 10 40* Unit µA µA
* : The hFE1 of the 2SC3149 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle.
10 K 20 15 L 30 20 M 40
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1098HA (KT)/5137KI/2125MW, TS No.1068–1/4
2SC3149
Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Collector-to-Emitter Sustain Voltage Collector-to-Emitter Sustain Voltage Symbol VCE(sat) VBE(sat) IC=0.75A, IB=0.15A IC=0.75A, IB=0.15A 900 800 7 800 800 900 1.0 3.0 0.7 Conditions Ratings min typ max 2.0 1.5 Unit V V V V V V V V µs µs µs
V(BR)CBO IC=1mA, IE=0 V(BR)CEO IC=5mA, RBE=∞ V(BR)EBO IE=1mA, IC=0 VCEO(sus) IC=1.5A, L=1mH, IB=0.5A VCEX(sus)1 IC=0.5A, IB1=0.1A, IB2=–0.1A, L=5mH, clamped
VCEX(sus)2 IC=0.25A, IB1=0.05A, IB2=–0.05A, L=10mH,
Turn-ON Time Storage Time Fall Time
ton tstg tf
clamped IC=1A, IB1=0.2A, IC=1A, IB1=0.2A,
IB2=–0.4A, RL=400Ω, IB2=–0.4A, RL=400Ω.