TK7S10N1Z

MOSFETs Silicon N-channel MOS (U-MOS-H) TK7S10N1Z 1. Applications Automotive Switching Voltage Regulators Motor Drivers 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 40 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit TK7S10N1Z 1: Gate 2: Drain (heatsink) 3: Source DPAK+ 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Single-pulse avalanche current Turn-off dVDS/dt ruggedness (Tc = 25) (Note 1) (Note 1) (Note 2) (Note 3) VDSS VGSS ID IDP PD EAS IAS dVDS/dt 100 ±20 7 21 50 19.6 7 8.4 V A W mJ A V/ns Channel temperature (Note 4) Tch 175  Storage temperature (Note 4) Tstg -55 to 175 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual re...