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3DG3020A1

GME

High Voltage Fast Switching NPN Power Transistor

Production specification High Voltage Fast Switching NPN Power Transistor 3DG3020A1 FEATURES z z z z Low Switch dissipa...


GME

3DG3020A1

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Description
Production specification High Voltage Fast Switching NPN Power Transistor 3DG3020A1 FEATURES z z z z Low Switch dissipation Low Reverse Current Excellent High temperature characteristics High reliability Pb Lead-free APPLICATIONS z Mainly used for compact electronic energy saving lamps, electronic charger, computer auxiliary power supply, power Switch circuit, this is the core component of electronic products. SOT-89S ORDERING INFORMATION Type No. 3DG3020A1 Marking 3020A1 Package Code SOT-89S MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction Temperature Storage Temperature Value 800 450 9 1.5 0.8 150 -55 to +150 Units V V V A W ℃ ℃ Z002 Rev.A www.gmicroelec.com 1 Production specification High Voltage Fast Switching NPN Power Transistor 3DG3020A1 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Ratio Collector-emitter saturation voltage Base-emitter saturation voltage storage time rise time fall time Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE hFE1/ hFE2 VCE(sat) VBE(sat) ts tr tf fT VCE=10V, IC=0.1A, f=1MHz 5 UI9600,IC=0.1A Test conditions IC=0.1mA,IE...




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