STK830P

Semiconductor STK830P Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features High Voltage: BVDSS=500V(Min.) Low Crss : Crss=8.4pF(Typ.) Low gate charge : Qg=17nC(Typ.) Low RDS(on) :RDS(on)=1.5Ω(Max.) Ordering Information Type NO. STK830P Marking STK830 Package Code TO-220AB-3L Outline Dimensions Φ3.90 Max. 9.80~10.20 1.17~1.37 unit : mm 14.90~15.30 12.16~12.36 28.50~29.10 13.50~13.90 3.14 Typ. 1.17 Min. 0.88 Max. 8.50~8.90 2.54 Typ. 1 2 3 2.54 Typ. 0.43 Max. 4.50~4.70 KSD-T0P009-001 2.87 Max. PIN Connections 1. Gate 2. Drain 3. Source 1 STK830P Absolute maximum ratings Characteristic Drain-source voltage Gate-source voltage Drain current (DC) Drain current (Pulsed) * (Tc=25°C) Symbol VDSS VGSS ID TC=25℃ TC=100℃ IDM PD ② ② ① ① IAS EAS IAR EAR TJ Tstg Rating 500 ±30 4.5 2.7 18 71 4.5 250 4.5 5.0 150 -55~150 Unit V V A A A W A mJ A mJ °C °C Drain power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * Limited by maximum junction temperature Characteristic Thermal resistance Junction-case Junction-ambient Symbol Rth(J-C) Rth(J-A) Typ. - Max 1.75 62.5 Unit ℃/W KSD-T0P009-001 2 STK830P Electrical Characteristics Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance Outp...