Power MOSFET. STK830P Datasheet

STK830P MOSFET. Datasheet pdf. Equivalent

Part STK830P
Description Advanced Power MOSFET
Feature Semiconductor STK830P Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • High.
Manufacture AUK
Datasheet
Download STK830P Datasheet



STK830P
Semiconductor
SWITCHING REGULATOR APPLICATIONS
Features
High Voltage: BVDSS=500V(Min.)
Low Crss : Crss=8.4pF(Typ.)
Low gate charge : Qg=17nC(Typ.)
Low RDS(on) :RDS(on)=1.5Ω(Max.)
STK830P
Advanced Power MOSFET
Ordering Information
Type NO.
STK830P
Outline Dimensions
Marking
STK830
9.80~10.20
Package Code
TO-220AB-3L
unit : mm
Φ3.90 Max.
1.17~1.37
1.17 Min.
0.88 Max.
2.54 Typ.
2.54 Typ.
123
KSD-T0P009-001
0.43 Max.
PIN Connections
1. Gate
2. Drain
3. Source
1



STK830P
Absolute maximum ratings
Characteristic
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (Pulsed) *
Drain power dissipation
Avalanche current (Single)
Single pulsed avalanche energy
Avalanche current (Repetitive)
Repetitive avalanche energy
Junction temperature
Storage temperature range
* Limited by maximum junction temperature
Symbol
VDSS
VGSS
ID
TC=25
TC=100
IDM
PD
IAS
EAS
IAR
EAR
TJ
Tstg
Rating
500
±30
4.5
2.7
18
71
4.5
250
4.5
5.0
150
-55~150
STK830P
(Tc=25°C)
Unit
V
V
A
A
A
W
A
mJ
A
mJ
°C
°C
Characteristic
Thermal
resistance
Junction-case
Junction-ambient
Symbol
Rth(J-C)
Rth(J-A)
Typ.
-
-
Max
1.75
62.5
Unit
/W
KSD-T0P009-001
2





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