Power Transistor. 2SD1847 Datasheet

2SD1847 Transistor. Datasheet pdf. Equivalent

Part 2SD1847
Description Silicon NPN Power Transistor
Feature INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1847 DESCRI.
Manufacture INCHANGE
Datasheet
Download 2SD1847 Datasheet



2SD1847
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1847
DESCRIPTION
·Collector-Base Breakdown Voltage-
: VCBO= 1500V (Min.)
·High Switching Speed
·Built-in Damper Diode
APPLICATIONS
·Designed for horizontal deflection output applications
.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector- Base Voltage
1500
V
VCES
Collector-Emitter Voltage
1500
V
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous
5A
ICM Collector Current-Peak
15 A
IBB Base Current- Continuous
Collector Power Dissipation
@ Ta=25
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
Tstg Storage Temperature Range
2A
3
W
100
150
-55~150
isc Websitewww.iscsemi.cn



2SD1847
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1847
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 500mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB=B 1A
VBE(sat) Base-Emitter Saturation Voltage
ICBO Collector Cutoff Current
hFE-1
DC Current Gain
IC= 4A; IB=B 1A
VCB= 750V; IE= 0
VCB= 1500V; IE= 0
IC= 1A; VCE= 5V
hFE-2
DC Current Gain
IC= 4A; VCE= 10V
fT Current-Gain—Bandwidth Product IC= 1A; VCE= 10V
VECF
C-E Diode Forward Voltage
Switching times, Resistive Load
IF= 5A
tstg Storage Time
tf Fall Time
IC= 4A; IB1= 1A; IB2= -2A;
VCC= 200V
MIN TYP. MAX UNIT
7V
8.0 V
1.5 V
10 μA
1.0 mA
5 25
4
2 MHz
2.3 V
1.5 μs
0.2 μs
isc Websitewww.iscsemi.cn
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