NPN Transistor. C1185 Datasheet

C1185 Transistor. Datasheet pdf. Equivalent

Part C1185
Description Silicon NPN Transistor
Feature SavantIC Semiconductor Product Specification Silicon NPN Power Transistors www.DataSheet4U.com 2S.
Manufacture SavantIC
Datasheet
Download C1185 Datasheet



C1185
SavantIC Semiconductor
Swwiwli.DcaotanSheNet4PU.NcomPower Transistors
DESCRIPTION
·With TO-3 package
·Wide area of safe operation
·High breakdown voltage
:VCEO=250V(min)
APPLICATIONS
·For voltage regulator,inverter,switching
mode power supply applications.
PINNING(see Fig.2)
PIN
DESCRIPTION
1 Base
2 Emitter
3 Collector
Product Specification
2SC1185
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=? )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
IC
PD
Emitter-base voltage
Collector current
Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25?
VALUE
300
250
5
0.7
50
150
-55~150
UNIT
V
V
V
A
W
?
?



C1185
SavantIC Semiconductor
Swwiwli.DcaotanSheNet4PU.NcomPower Transistors
CHARACTERISTICS
Tj=25? unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=30mA; IB=0
V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=500mA; IB=100mA
VBEsat Base-emitter saturation voltage
IC=500mA; IB=100mA
ICBO Collector cut-off current
VCB=200V;IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE DC current gain
IC=0.4A ; VCE=10V
Product Specification
2SC1185
MIN TYP. MAX UNIT
250 V
300 V
5V
1.0 V
1.5 V
10 µA
10 µA
40 200
2





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