Power Transistors. D1025 Datasheet

D1025 Transistors. Datasheet pdf. Equivalent

Part D1025
Description Silicon NPN Power Transistors
Feature SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1025 www.datasheet.
Manufacture SavantIC
Datasheet
Download D1025 Datasheet



D1025
SavantIC Semiconductor
Silicon NPN Power Transistors
DESCRIPTION
www.dat·aWshiethet4TuO.co-2m20 package
·High DC current gain
·DARLINGTON
Product Specification
2SD1025
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
Open base
VEBO
IC
Emitter-base voltage
Collector current
Open collector
ICM Collector current-Peak
IB Base current
IBM Base current-Peak
PT Total power dissipation
TC=25
Tj Junction temperature
Tstg Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R8j-C
Thermal resistance junction to case
VALUE
200
200
7
8
12
0.5
1.0
50
150
-55~150
UNIT
V
V
V
A
A
A
A
W
VALUE
2.5
UNIT
/W



D1025
SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0
VCEsat Collector-emitter saturation voltage IC=5A; IB=10mA
VBEsat
Base-emitter saturation voltage
IC=5A ;IB=10mA
ICBO Collector cut-off current
VCB=200V ;IE=0
ICEO Collector cut-off current
VCE=200V; IB=0
IEBO Emitter cut-off current
VEB=7V; IC=0
hFE DC current gain
IC=5A ; VCE=3V
fT Transition frequency
IC=0.8A ; VCE=10V
Switching times
ton Turn-on time
ts Storage time
tf Fall time
IC=5A
IB1=- IB2=10mA
RL=5C; VBB2=4V
Product Specification
2SD1025
MIN TYP. MAX UNIT
200 V
1.5 V
2.0 V
0.1 mA
0.1 mA
5.0 mA
1500
30000
20 MHz
2.0 µs
8.0 µs
5.0 µs
2





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