Barrier Rectifiers. SS15 Datasheet

SS15 Rectifiers. Datasheet pdf. Equivalent

Part SS15
Description 1.0 AMP. Surface Mount Schottky Barrier Rectifiers
Feature SS12 THRU SS110 1.0 AMP. Surface Mount Schottky Barrier Rectifiers Voltage Range 20 to 100 Volts Cur.
Manufacture Taiwan Semiconductor
Datasheet
Download SS15 Datasheet



SS15
SS12 THRU SS110
Features
1.0 AMP. Surface Mount Schottky Barrier Rectifiers
Voltage Range
20 to 100 Volts
Current
1.0 Ampere
SMA/DO-214AC
For surface mounted application
Metal to silicon rectifier, majority carrier conduction
Low forward voltage drop
Easy pick and place
High surge current capability
Plastic material used carriers Underwriters
Laboratory Classification 94V-O
Epitaxial construction
High temperature soldering:
260oC/ 10 seconds at terminals
.062(1.58)
.050(1.27)
.111(2.83)
.090(2.29)
.187(4.75)
.160(4.06)
Mechanical Data
Case: Molded plastic
Terminals: Solder plated
Polarity: Indicated by cathode band
Packaging: 12mm tape per EIA STD RS-481
Weight: 0.064 gram
.103(2.61)
.078(1.99)
.056(1.41)
.035(0.90)
.008(.20)
.004(.10)
.210(5.33)
.195(4.95)
.012(.31)
.006(.15)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol SS SS SS SS SS SS SS
12 13 14 15 16 19 110
Maximum Recurrent Peak Reverse Voltage VRRM 20 30 40 50 60 90 100
Maximum RMS Voltage
VRMS 14 21 28 35 42 63 70
Maximum DC Blocking Voltage
VDC 20 30 40 50 60 90 100
Maximum Average Forward Rectified Current
at TL(See Fig. 1)
I(AV)
1.0
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated Load IFSM
(JEDEC method )
30
Maximum Instantaneous Forward Voltage
(Note 1) @ 1.0A
VF
0.5
0.75 0.80
Maximum DC Reverse Current @ TA =25at
Rated DC Blocking Voltage @ TA=100
IR
0.4
10
5.0
0.05
0.5
Maximum DC Reverse Current at VR=33V &
TA=50
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance ( Note 2 )
HTIR
Cj
RθJL
RθJA
-
50
28
88
5.0
Operating Temperature Range
TJ -65 to +125
-65 to +150
Storage Temperature Range
TSTG
-65 to +150
Notes: 1. Pulse Test with PW=300 usec, 1% Duty Cycle
2. Measured on P.C.Board with 0.2 x 0.2”(5.0 x 5.0mm) Copper Pad Areas.
3. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Units
V
V
V
A
A
V
mA
mA
uA
pF
/W
/W
- 20 -



SS15
RATINGS AND CHARACTERISTIC CURVES (SS12 THRU SS110)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
1.0
RESISTIVE OR
INDUCTIVE LOAD
SS12- SS14
SS15-SS110
.50
FIG.2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
50
AT RATED TL
40 8.3ms Single Half Sine Wave
JEDEC Method
30
20
PCB MOUNTED ON 0.2X0.2"
(5.0X5.0mm) COPPER PAD AREAS
0
50 60 70 80 90 100 110 120 130
LEAD TEMPERATURE. (oC)
140 150
160 170
FIG.3- TYPICAL FORWARD CHARACTERISTICS
50
Tj=1250C
10.0
10
0
1 10
NUMBER OF CYCLES AT 60Hz
FIG.4- TYPICAL REVERSE CHARACTERISTICS
100
SS12-SS14
SS15-SS110
10
100
Tj=1500C
1
Tj=250C
Tj=1250C
1
0.1 Tj=750C
0.1
PULSE WIDTH=300 S
1% DUTY CYCLE
0.01
0
SS12-SS14
SS15-SS16
SS19-SS110
.2 .4 .6 .8 1.0 1.2 1.4 1.6
FORWARD VOLTAGE. (V)
FIG.5- TYPICAL JUNCTION CAPACITANCE
400
Tj=250C
f=1.0MHz
Vsig=50mVp-p
SS12-SS14
100 SS15-SS16
SS19-SS110
10
.1
1.0 10
REVERSE VOLTAGE. (V)
100
0.01
Tj=250C
0.0010 20 40 60 80 100 120
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
140
FIG.6- TYPICAL CAPACITANCE
200
180 NOTE: TYPICAL CAPACITANCE
AT 0 V = 160 pF
160
140
120
100
80
60
40
20
0
0
4
8 12 16 20 24 28 32 36
VR , REVERSE VOLTAGE (VOLTS)
40
- 21 -





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)