Power Diodes
Power Diodes
Controlled Avalanche
Features:
• • • • • • • For surface mounted application Metal to silicon rectifier, ma...
Description
Power Diodes
Controlled Avalanche
Features:
For surface mounted application Metal to silicon rectifier, majority carrier conduction Low forward voltage drop Easy pick and place High surge current capability Epitaxial construction High temperature soldering : 250°C / 10 seconds at terminals
Mechanical Data
Cases Terminals Polarity : Moulded plastic : Solder plated : Indicated by cathode band
SMA/DO-214AC
Dimensions : Inches (Millimetres)
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage
www.element14.com www.farnell.com www.newark.com
SS14 40 28 40
SS16 60 42 60
SS110 100 70 100
Unit
V
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19/05/12 V1.1
Power Diodes
Controlled Avalanche
Type Number Maximum average forward rectified current at TL (See Figure 1) Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Maximum Instantaneous forward voltage (Note) at 1 A Maximum DC reverse current at TA = 25°C at rated DC blocking voltage at TA = 100°C Typical thermal resistance (Note 2) RθJL RθJA Operating temperature range TJ Storage temperature range TSTG Notes: 1. Pulse test with PW = 300 µ seconds, 1% duty cycle 2. Measured on PC Board with 0.2 × 0.2 inches (5 × 5 mm) copper pad areas -65 to +125 ...
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