BARRIER DIODE. SS16 Datasheet

SS16 DIODE. Datasheet pdf. Equivalent

Part SS16
Description 1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE
Feature SS12 – SS110 1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Features ! ! ! ! ! ! ! Schottky Barrier Chip .
Manufacture DZSC
Datasheet
Download SS16 Datasheet



SS16
SS12 – SS110
1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
! Schottky Barrier Chip
! Ideally Suited for Automatic Assembly
! Low Power Loss, High Efficiency
! Surge Overload Rating to 30A Peak
! For Use in Low Voltage Application
! Guard Ring Die Construction
! Plastic Case Material has UL Flammability
A
B
F
Classification Rating 94V-O
C
HG
E
D
Mechanical Data
! Case: SMA/DO-214AC, Molded Plastic
! Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
! Polarity: Cathode Band or Cathode Notch
! Marking: Type Number
! Weight: 0.064 grams (approx.)
! Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
SMA/DO-214AC
Dim Min Max
A 2.50 2.90
B 4.00 4.60
C 1.20 1.60
D
0.152
0.305
E 4.80 5.28
F 2.00 2.44
G
0.051
0.203
H 0.76 1.52
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Characteristic
Symbol SS12 SS13 SS14 SS15 SS16 SS18 SS19 S100 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
VRRM
VRWM 20 30 40 50 60 80 90 100 V
VR
VR(RMS)
14
21
28
35
42
56
64
71
V
Average Rectified Output Current @TL = 75°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
@IF = 1.0A
Peak Reverse Current
@TA = 25°C
At Rated DC Blocking Voltage @TA = 100°C
Typical Thermal Resistance (Note 1)
Operating Temperature Range
Storage Temperature Range
IO
IFSM
VFM
IRM
RJL
RJA
Tj
TSTG
1.0 A
30 A
0.50
0.70
0.85 V
0.5
20
mA
28
88
°C/W
-65 to +125
°C
-65 to +150
°C
Note: 1. Mounted on P.C. Board with 5.0mm2 copper pad area.
SS12 – SS110
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SS16
1.0
0.5
0
25 50 75 100 125 150
TL, LEAD TEMPERATURE (ºC)
Fig. 1 Forward Current Derating Curve
40
Single Half Sine-Wave
(JEDEC Method)
30
SS12 – SS110
10
SS12 - SS14
SS15 - SS16
1.0
SS18 - S100
0.1
0.01
0
Tj - 25ºC
IF Pulse Width = 300 µs
0.4 0.8 1.2
VF, INSTANTANEOUS FWD VOLTAGE (V)
Fig. 2 Typ. Forward Characteristics
1000
Tj = 25°C
f = 1 MHz
20 100
10
Tj = 150ºC
0
1
10
100
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
100
10
0.1
1 10
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
100
10
Tj = 100ºC
1.0
Tj = 75ºC
0.1
SS12 – SS110
0.01
Tj = 25ºC
0.001
0
20 40
60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
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