2SC4160. C4160 Datasheet

C4160 2SC4160. Datasheet pdf. Equivalent

Part C4160
Description 2SC4160
Feature Ordering number:ENN2481C NPN Triple Diffused Planar Silicon Transistor 2SC4160 400V/4A Switching R.
Manufacture Sanyo Semicon Device
Datasheet
Download C4160 Datasheet



C4160
Ordering number:ENN2481C
NPN Triple Diffused Planar Silicon Transistor
2SC4160
400V/4A Switching Regulator Applications
Features
· High breakdown voltage.
· High reliability.
· Fast switching speed (tf=0.1µs typ).
· Wide ASO.
· Adoption of MBIT process.
· Micaless package facilitating mounting.
Package Dimensions
unit:mm
2041A
[2SC4160]
10.0
3.2
4.5
2.8
Specifications
Absolute Maximum Ratings at Ta = 25˚C
1.6
1.2
0.75
123
2.55 2.55
2.55 2.55
2.4
0.7
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220ML
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
PW300µs, duty cycle10%
Tc=25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO VCB=400V, IE=0
Emitter Cutoff Current
IEBO VEB=5V, IC=0
hFE1* VCE=5V, IC=0.4A
DC Current Gain
hFE2 VCE=5V, IC=2A
hFE3 VCE=5V, IC=10mA
* : The hFE1 of the 2SC4160 is classified as follows.
When specifying the hFE1 rank, specify two or more ranks in principle.
Rank
hFE
L
15 to 30
Ratings
500
400
7
4
8
1.5
2
25
150
–55 to +150
Unit
V
V
V
A
A
A
W
W
˚C
˚C
Ratings
min typ max
Unit
10 µA
10 µA
15 50
10
10
Continued on next page.
M
20 to 40
N
30 to 50
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O2500TS (KOTO)/D0198HA (KT)/3267TA, TS No.2481–1/4



C4160
2SC4160
Continued from preceding page.
Parameter
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector-to-Emitter Sustain Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCEX(sus)
ton
tstg
tf
VCE=10V, IC=0.4A
VCB=10V, f=1MHz
IC=2A, IB=0.4A
IC=2A, IB=0.4A
IC=1mA, IE=0
IC=5mA, RBE=
IE=1mA, IC=0
IC=2A, IB1=0.2A, IB2=–0.8A, L=1mH, clamped
IC=3A, IB1=0.6A, IB2=–1.2A, RL=66.6,
VCC=200V
IC=3A, IB1=0.6A, IB2=–1.2A, RL=66.6,
VCC=200V
IC=3A, IB1=0.6A, IB2=–1.2A, RL=66.6,
VCC=200V
Ratings
min typ
20
50
500
400
7
400
max
0.8
1.5
Unit
MHz
pF
V
V
V
V
V
V
0.5 µs
2.5 µs
0.3 µs
Switching Time Test Circuit
PW=20µs
DC 1%
I NPUT
IB1
IB2
RB
VR
50+
100µF
VBE =-5V
OUTPUT
RL
+
470µF
VCC=200V
IC - VCE
5
500mA 450mA 400mA
4
3
2
1
350mA
300mA
250mA
200mA
150mA
100mA
50mA
0 IB= 0
0 2 4 6 8 10
Collector-to-Emitter Voltage, VCE – V
100
VCE = 5V
7
hFE - IC
5 Ta=120°C
25°C
3
2 -40°C
4
VCE = 5V
IC - VBE(on)
3
2
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE(on) – V
1.0 IC / IB=5
VCE(sat) - IC
7
5
1.4
3
2
10
7
55 7 0.1
2 3 5 7 1.0
23
Collector Current, IC – A
5 7 10
0.1
7
5
5 7 0.1
23
5 7 1.0
23
Collector Current, IC – A
5 7 10
No.2481–2/4





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)