BUL1102E

BUL1102E High voltage fast-switching NPN power transistor Features ■ ■ High voltage capability Very high switching speed TAB Applications Four lamp electronic ballast for: 3 3 1 2 ■ ■ 120 V mains in push-pull configuration 277 V mains in half bridge current feed configuration TO-220 1 2 TO-220FP Description This is a high voltage fast switching NPN power transistor manufactured in multi epitaxial planar technology. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during breakdown condition, without using the Transil™ protection usually necessary in typical converters for lamp ballast. Figure 1. Internal schematic diagram C (2, TAB) (1) B E (3) Table 1. Device summary Marking BUL1102E BUL1102EFP Package TO-220 TO-220FP Packaging Tube Tube Order codes BUL1102E BUL1102EFP February 2012 Doc ID 7929 Rev 5 1/13 www.st.com 13 Absolute maximum ratings BUL1102E 1 Absolute maximum ratings Table 2. Symbol VCES VCEO VEBO IC ICM IB IBM PTOT VISO TSTG TJ Absolute maximum ratings Parameter Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5 ms) Base current Base peak current (tP < 5 ms) BUL1102E total dissipation at TC = 25°C BUL1102EFP total dissipat...