power transistor. BUL1102E Datasheet

BUL1102E transistor. Datasheet pdf. Equivalent

Part BUL1102E
Description High voltage fast-switching NPN power transistor
Feature BUL1102E High voltage fast-switching NPN power transistor Features ■ ■ High voltage capability Very.
Manufacture STMicroelectronics
Datasheet
Download BUL1102E Datasheet



BUL1102E
BUL1102E
High voltage fast-switching
NPN power transistor
Features
High voltage capability
Very high switching speed
Applications
Four lamp electronic ballast for:
120 V mains in push-pull configuration
277 V mains in half bridge current feed
configuration
Description
This is a high voltage fast switching NPN power
transistor manufactured in multi epitaxial planar
technology. It uses a cellular emitter structure with
planar edge termination to enhance switching
speeds while maintaining a wide RBSOA.
Thanks to an increased intermediate layer, it has
an intrinsic ruggedness which enables the
transistor to withstand a high collector current
level during breakdown condition, without using
the Transil™ protection usually necessary in
typical converters for lamp ballast.
TAB
3
2
1
TO-220
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
C (2, TAB)
(1)
B
E (3)
Table 1. Device summary
Order codes
Marking
BUL1102E
BUL1102E
BUL1102EFP
BUL1102EFP
Package
TO-220
TO-220FP
February 2012
Doc ID 7929 Rev 5
Packaging
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1/13
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BUL1102E
Absolute maximum ratings
1 Absolute maximum ratings
BUL1102E
Table 2. Absolute maximum ratings
Symbol
Parameter
VCES
VCEO
VEBO
IC
ICM
IB
IBM
PTOT
VISO
TSTG
TJ
Collector-emitter voltage (VBE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage (IC = 0)
Collector current
Collector peak current (tP < 5 ms)
Base current
Base peak current (tP < 5 ms)
BUL1102E total dissipation at TC = 25°C
BUL1102EFP total dissipation at TC = 25 °C
BUL1102EFP insolation withstand voltage (RMS) from
all three leads to external heatsink
Storage temperature
Max. operating junction temperature
Value
1100
450
12
4
8
2
4
70
30
1500
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
V
°C
°C
Table 3. Thermal data
Symbol
Parameter
RthJC
BUL1203E thermal resistance junction-case
BUL1203EFP thermal resistance junction-case
Value
1.8
4.2
Unit
°C/W
°C/W
2/13 Doc ID 7929 Rev 5





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