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MAC224A4 Dataheets PDF



Part Number MAC224A4
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Silicon Bidirectional Thyristors
Datasheet MAC224A4 DatasheetMAC224A4 Datasheet (PDF)

MAC224A Series Preferred Device Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications such as lighting systems, heater controls, motor controls and power supplies. • Blocking Voltage to 800 Volts • All Diffused and Glass-Passivated Junctions for Parameter Uniformity and Stability • Gate Triggering Guaranteed in Four Modes • High Current and Surge Ratings • Device Marking: Logo, Device Type, e.g., MAC224A4, Date Code MAXIMUM RATINGS (TJ = 25°C unless ot.

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MAC224A Series Preferred Device Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications such as lighting systems, heater controls, motor controls and power supplies. • Blocking Voltage to 800 Volts • All Diffused and Glass-Passivated Junctions for Parameter Uniformity and Stability • Gate Triggering Guaranteed in Four Modes • High Current and Surge Ratings • Device Marking: Logo, Device Type, e.g., MAC224A4, Date Code MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off−State Voltage(1) (TJ = −40 to 125°C, Sine Wave 50 to 60 Hz, Gate Open) MAC224A4 MAC224A6 MAC224A8 MAC224A10 On−State RMS Current (TC = 75°C)(2) (Full Cycle Sine Wave 50 to 60 Hz) Peak Non−repetitive Surge Current (One Full Cycle, 60 Hz, TJ = 125°C) Circuit Fusing Considerations (t = 8.3 ms) Peak Gate Current (Pulse Width v 2.0 μsec; TC = 75°C) Peak Gate Voltage (Pulse Width v 2.0 μsec; TC = 75°C) Peak Gate Power (Pulse Width v 2.0 μsec; TC = 75°C) Average Gate Power (TC = 75°C, t = 8.3 ms) Operating Junction Temperature Range Storage Temperature Range Mounting Torque Symbol VDRM, VRRM 200 400 600 800 IT(RMS) 40 A 1 ITSM I2t IGM VGM PGM PG(AV) TJ Tstg — 350 500 "2.0 "10 20 0.5 − 40 to 125 − 40 to 150 8.0 A A2s A Value Unit Volts http://onsemi.com TRIACS 40 AMPERES RMS 200 thru 800 VOLTS MT2 G MT1 4 2 3 TO−220AB CASE 221A STYLE 4 PIN ASSIGNMENT Volts Watts Watts °C °C in. lb. 1 2 3 4 Main Terminal 1 Main Terminal 2 Gate Main Terminal 2 ORDERING INFORMATION Device MAC224A4 MAC224A6 MAC224A8 MAC224A10 Package TO220AB TO220AB TO220AB TO220AB Shipping 500/Box 500/Box 500/Box 500/Box (1) VDRM, VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. (2) This device is rated for use in applications subject to high surge conditions. Care must be taken to insure proper heat sinking when the device is to be used at high sustained currents. (See Figure 1 for maximum case temperatures.) Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 2 1 Publication Order Number: MAC224A/D MAC224A Series THERMAL CHARACTERISTICS Characteristic Thermal Resistance — Junction to Case Thermal Resistance — Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds Symbol RθJC RθJA TL Value 1.0 60 260 Unit °C/W °C ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Blocking Current (Rated VDRM, VRRM; Gate Open) TJ = 25°C TJ = 125°C IDRM, IRRM — — — — 10 2.0 μA mA ON CHARACTERISTICS Peak On−State Voltage (ITM = "56 A Peak, Pulse Width p 2 ms, Duty Cycle p 2%) Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω) MT2(+), G(+); MT2(+), G(−); MT2(+), G(−) MT2(−), G(+) Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω) MT2(+), G(+); MT2(−), G(−); MT(+), G(−) MT2(−), G(+) Gate Non-Trigger Voltage (VD = 12 V, TJ = 125°C, RL = 100 Ω) All Quadrants Holding Current (VD = 12 Vdc, Gate Open, Initiating Current = "200 mA) Gate Controlled Turn-On Time (VD = Rated VDRM, ITM = 56 A Peak, IG = 200 mA) VTM IGT — — VGT — — VGD 0.2 1.1 1.3 — 2.0 2.5 — Volts 25 40 50 75 Volts — 1.4 1.85 Volts mA IH tgt — — 30 1.5 75 — mA μs DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform, TC = 125°C) Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 56 A Peak, Commutating di/dt = 20.2 A/ms, Gate Unenergized, TC = 75°C) dv/dt dv/dt(c) — — 50 5.0 — — V/μs V/μs http://onsemi.com 2 MAC224A Series Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Quadrant 1 MainTerminal 2 + Symbol VDRM IDRM VRRM IRRM VTM IH Parameter Peak Repetitive Forward Off State Voltage Peak Forward Blocking Current Peak Repetitive Reverse Off State Voltage Peak Reverse Blocking Current Maximum On State Voltage Holding Current Quadrant 3 MainTerminal 2 − IH VTM IRRM at VRRM on state IH VTM off state + Voltage IDRM at VDRM Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 (+) MT2 Quadrant II (−) IGT GATE MT1 REF (+) IGT GATE MT1 REF Quadrant I IGT − (−) MT2 (−) MT2 + IGT Quadrant III (−) IGT GATE MT1 REF (+) IGT GATE MT1 REF − MT2 NEGATIVE (Negative Half Cycle) Quadrant IV All polarities are referenced to MT1. With in−phase signals (using standard AC lines) quadrants I and III are used. http://onsemi.com 3 MAC224A Series T C, MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C) PD , AVERAGE POWER DISSIPATION (WATTS) 0 5.0 10 15 20 25 30 35 40 125 115 60 54 48 42 36 30 24 18 12 6.0 0 0 5.0 10 15 20 25 30 35 40 120 110 105 95 90 85 80 75 100 IT(RMS), RMS ON-STATE CURRENT (AMPS)* IT(RMS), RMS ON-STATE CURRENT (AMPS)* Fig.


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