Bidirectional Thyristors. MAC224A10 Datasheet

MAC224A10 Thyristors. Datasheet pdf. Equivalent

Part MAC224A10
Description Silicon Bidirectional Thyristors
Feature MAC224A Series Preferred Device Triacs Silicon Bidirectional Thyristors Designed primarily for full.
Manufacture ON Semiconductor
Datasheet
Download MAC224A10 Datasheet



MAC224A10
MAC224A Series
Triacs
Preferred Device
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications such as
lighting systems, heater controls, motor controls and power supplies.
Blocking Voltage to 800 Volts
All Diffused and Glass-Passivated Junctions for Parameter Uniformity
and Stability
Gate Triggering Guaranteed in Four Modes
High Current and Surge Ratings
Device Marking: Logo, Device Type, e.g., MAC224A4, Date Code
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TRIACS
40 AMPERES RMS
200 thru 800 VOLTS
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Peak Repetitive OffState Voltage(1)
(TJ = 40 to 125°C, Sine Wave 50 to
60 Hz, Gate Open)
MAC224A4
MAC224A6
MAC224A8
MAC224A10
VDRM,
VRRM
200
400
600
800
OnState RMS Current (TC = 75°C)(2)
(Full Cycle Sine Wave 50 to 60 Hz)
IT(RMS)
40
Unit
Volts
A
Peak Nonrepetitive Surge Current
(One Full Cycle, 60 Hz, TJ = 125°C)
Circuit Fusing Considerations
(t = 8.3 ms)
ITSM
I2t
350 A
500 A2s
Peak Gate Current
(Pulse Width v 2.0 μsec; TC = 75°C)
IGM
"2.0
A
Peak Gate Voltage
(Pulse Width v 2.0 μsec; TC = 75°C)
VGM
"10
Volts
Peak Gate Power
(Pulse Width v 2.0 μsec; TC = 75°C)
PGM
20 Watts
Average Gate Power
(TC = 75°C, t = 8.3 ms)
PG(AV)
0.5 Watts
Operating Junction Temperature Range
TJ 40 to 125 °C
Storage Temperature Range
Tstg 40 to 150 °C
Mounting Torque
— 8.0 in. lb.
(1) VDRM, VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
(2) This device is rated for use in applications subject to high surge conditions.
Care must be taken to insure proper heat sinking when the device is to be
used at high sustained currents. (See Figure 1 for maximum case
temperatures.)
MT2
MT1
G
4
12 3
TO220AB
CASE 221A
STYLE 4
PIN ASSIGNMENT
1 Main Terminal 1
2 Main Terminal 2
3 Gate
4 Main Terminal 2
ORDERING INFORMATION
Device
Package
Shipping
MAC224A4
TO220AB
500/Box
MAC224A6
TO220AB
500/Box
MAC224A8
TO220AB
500/Box
MAC224A10
TO220AB
500/Box
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 2
1
Publication Order Number:
MAC224A/D



MAC224A10
MAC224A Series
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Maximum Lead Temperature for Soldering Purposes 1/8from Case for 10 Seconds
Symbol
RθJC
RθJA
TL
Value
1.0
60
260
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min Typ
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(Rated VDRM, VRRM; Gate Open)
ON CHARACTERISTICS
TJ = 25°C
TJ = 125°C
IDRM,
IRRM
——
——
Peak OnState Voltage
(ITM = "56 A Peak, Pulse Width p 2 ms, Duty Cycle p 2%)
Gate Trigger Current (Continuous dc)
(VD = 12 V, RL = 100 Ω)
MT2(+), G(+); MT2(+), G(); MT2(+), G()
MT2(), G(+)
VTM — 1.4
IGT
— 25
— 40
Gate Trigger Voltage (Continuous dc)
(VD = 12 V, RL = 100 Ω)
MT2(+), G(+); MT2(), G(); MT(+), G()
MT2(), G(+)
VGT
— 1.1
— 1.3
Gate Non-Trigger Voltage
(VD = 12 V, TJ = 125°C, RL = 100 Ω)
All Quadrants
VGD
0.2 —
Holding Current
(VD = 12 Vdc, Gate Open, Initiating Current = "200 mA)
Gate Controlled Turn-On Time
(VD = Rated VDRM, ITM = 56 A Peak, IG = 200 mA)
DYNAMIC CHARACTERISTICS
IH — 30
tgt — 1.5
Critical Rate of Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Waveform, TC = 125°C)
Critical Rate of Rise of Commutation Voltage
(VD = Rated VDRM, ITM = 56 A Peak, Commutating
di/dt = 20.2 A/ms, Gate Unenergized, TC = 75°C)
dv/dt
dv/dt(c)
— 50
— 5.0
Max
10
2.0
1.85
50
75
2.0
2.5
75
Unit
°C/W
°C
Unit
μA
mA
Volts
mA
Volts
Volts
mA
μs
V/μs
V/μs
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2





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