Darlington
2SD1769
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=12...
Darlington
2SD1769
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=120V VEB=6V IC=10mA VCE=2V, IC=3A IC=3A, IB=3mA IC=3A, IB=3mA VCE=12V, IE=–0.2A VCB=10V, f=1MHz 2SD1769 10max 20max 120min 2000min 1.5max 2.0max 100typ
typ
Equivalent circuit
B
C
(2.5k Ω)(200 Ω) E
Silicon
NPN Triple Diffused Planar
Transistor sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD1769 120 120 6 6(Pulse10) 1 50(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Driver for Solenoid, Relay and Motor, Series
Regulator, and General Purpose
(Ta=25°C) Unit
External Dimensions MT-25(TO220)
3.0±0.2 10.2±0.2 4.8±0.2 2.0±0.1
µA
mA V V MHz pF
2.5 12.0min 4.0max 16.0±0.7 8.8±0.2
a b
ø3.75±0.2
V
1.35
0.65 +0.2 -0.1 2.5 B C E 1.4
sTypical Switching Characteristics (Common Emitter)
VCC (V) 30 RL (Ω) 10 IC (A) 3 VBB1 (V) 10 VBB2 (V) –1.5 IB1 (mA) 3 IB2 (mA) –3 ton (µs) 0.5typ tstg (µs) 5.5typ tf (µs) 1.5typ
Weight : Approx 2.6g a. Type No. b. Lot No.
I C – V CE Characteristics (Typical)
A
5m A
mA
V CE ( sa t ) – I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at) (V ) 3
I C – V BE Temperature Characteristics (Typical)
(V CE =2V) 8
8
20
10 m
3
m
2mA
1 .5 m A
A
Collector Current I C (A)
0 .7 m
A
2
Tem
mp) e Te
4
A 0 .5 m
0 .4 m A
Collector Current I C (A)
6
1mA
6
4
p)
125
25˚C
2
2
I B =0.3mA
0
0
2
4
6
0
0.3
1
5
10
50
100
0
0
1 Base-Emittor Voltage ...
