Power-Transistor. IPD200N15N3G Datasheet

IPD200N15N3G Power-Transistor. Datasheet pdf. Equivalent

Part IPD200N15N3G
Description Power-Transistor
Feature IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G OptiMOS™3 Power-Transistor Features • N-cha.
Manufacture Infineon Technologies
Datasheet
Download IPD200N15N3G Datasheet



IPD200N15N3G
IPB200N15N3 G IPD200N15N3 G
IPI200N15N3 G IPP200N15N3 G
OptiMOS3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 175 °C operating temperature
Product Summary
V DS
R DS(on),max
ID
150 V
20 m
50 A
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21 *
Type
IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G
IPP200N15N3 G
Package
Marking
PG-TO263-3
200N15N
PG-TO252-3
200N15N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
PG-TO262-3
200N15N
PG-TO220-3
200N15N
Value
Unit
Continuous drain current
Pulsed drain current2)
Avalanche energy, single pulse
ID
I D,pulse
E AS
T C=25 °C
T C=100 °C
T C=25 °C
I D=50 A, R GS=25
Reverse diode dv /dt
dv /dt
I D=50 A, V DS=120 V,
di /dt =100 A/µs,
T j,max=175 °C
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) See figure 3
* Except D-PAK ( TO-252 )
Rev. 2.05
page 1
50
40
200
170
6
±20
150
-55 ... 175
55/175/56
A
mJ
kV/µs
V
W
°C
2010-04-28



IPD200N15N3G
IPB200N15N3 G IPD200N15N3 G
IPI200N15N3 G IPP200N15N3 G
Parameter
Symbol Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
R thJC
R thJA
minimal footprint
6 cm2 cooling area3)
-
-
-
- 1 K/W
- 75
- 50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V (BR)DSS V GS=0 V, I D=1 mA
V GS(th) V DS=V GS, I D=90 µA
I DSS
V DS=120 V, V GS=0 V,
T j=25 °C
150
2
-
-
3
0.1
-V
4
1 µA
Gate-source leakage current
I GSS
V DS=120 V, V GS=0 V,
T j=125 °C
V GS=20 V, V DS=0 V
-
-
10 100
1 100 nA
Drain-source on-state resistance
R DS(on) V GS=10 V, I D=50 A
-
16 20 m
Gate resistance
Transconductance
V GS=8 V, I D=25 A
- 16 20
RG -
g fs
|V DS|>2|I D|R DS(on)max,
I D=50 A
29
2.4
57
-
-S
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.05
page 2
2010-04-28





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