2SA1494
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3858) sAbsolute maximum ratings (Ta=25°C)
Symbol ...
2SA1494
Silicon
PNP Epitaxial Planar
Transistor (Complement to type 2SC3858) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SA1494 –200 –200 –6 –17 –5 200(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Audio and General Purpose
(Ta=25°C) 2SA1494 –100max –100max –200min 50min∗ –2.5max 20typ 500typ V MHz pF
20.0min 4.0max 2 3 1.05 +0.2 -0.1 5.45±0.1 5.45±0.1 B C E 0.65 +0.2 -0.1 3.0 +0.3 -0.1
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=–200V VEB=–6V IC=–50mA VCE=–4V, IC=–8A IC=–10A, IB=–1A VCE=–12V, IE=1A VCB=–10V, f=1MHz
External Dimensions MT-200
36.4±0.3 24.4±0.2 2-ø3.2±0.1 9 7 21.4±0.3 2.1 6.0±0.2
Unit
µA µA
V
a b
∗hFE Rank Y(50 to 100), P(70 to 140), G(90 to 180)
sTypical Switching Characteristics (Common Emitter)
VCC (V) –40 RL (Ω) 4 IC (A) –10 VBB1 (V) –10 VBB2 (V) 5 IB1 (A) –1 IB2 (A) 1 ton (µs) 0.6typ tstg (µs) 0.9typ tf (µs) 0.2typ
Weight : Approx 18.4g a. Type No. b. Lot No.
I C – V CE Characteristics (Typical)
–17
A .5 –1
V CE ( sat ) – I B Characteristics (Typical)
–3 Collector-Emitter Saturation Voltage V C E (s at) (V )
I C – V BE Temperature Characteristics (Typical)
–17 –15 Collector Current I C (A) (V C E =–4V)
–1A
–60
–15
0
mA
–40
Collector Current I C (A)
0mA
–200m
A
–2
–10
–1 00 m A
–10
e Te mp) Temp )
(Case 25˚C
–5
–50mA
I C =–15A –10A –5A 0 0 –1 –2 –3
–5
125˚C
I B =–20mA
0
0
–1
–2
–3
–4
0
0
–30˚C
–1 Base-Emittor Voltage V B E (V)
...
