U16NB50 Datasheet (data sheet) PDF





U16NB50 Datasheet, STU16NB50

U16NB50   U16NB50  

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STU16NB50 N-CHANNEL 600V - 0.45Ω - 10. 7A - Max220 PowerMESH™ MOSFET PRELIMI NARY DATA TYPE ST U16NB50 s s s s s s V DSS 500 V R DS(on) < 0.33 Ω ID 15 .6 A TYPICAL RDS(on) = 0.4 Ω EXTREME LY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED ± 30V GATE TO S OURCE VOLTAGE RATING 1 2 3 DESCRIPT ION Using the latest high voltage MES

U16NB50 Datasheet, STU16NB50

U16NB50   U16NB50  
H OVERLAY™ process, SGS-Thomson has de signed an advanced family of power MOSF ETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanch e and dv/dt capabilities and unrivalled gate charge and switching characterist ics. APPLICATIONS SWITCH MODE PO








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