ET840

ET840 9 Amps，500Volts N-Channel MOSFET ■ Description The ET840 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. ■ Features RDS(ON) = 0.80Ω@VGS = 10 V Low gate charge ( typical 30nC) Fast switching capability Avalanche energy specified Improved dv/dt capability ■ Symbol ■ Absolute Maximum Ratings(Tc=25℃,unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Drain Currenet Continuous Drain Current Pulsed Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation Junction Temperature Storage Temperature ＊ Symbol VDSS VGSS Tc=25℃ Tc=100℃ (Note 1) ID IDP EAR EAS dv/dt PD TJ TSTG 139 1.11 9.0 5.4 36 Ratings TO-220 500 ±30 9.0 5.4 36 13.9 360 4.5 45.5 0.36 +150 -55~+150 ＊ Units V V A A A mJ mJ V/ns W W/℃ ℃ ℃ TO-220F ＊ ＊ Repetitive Single Pulse (Note 1) (Note 2) (Note 3) Tc=25℃ Derate above 25℃ Drain current limited by maximum junction temperature. 1 BEIJING ESTEK ELECTRONICS CO.,LTD ET840 ■ Thermal Characteristics Parameter Thermal Resistance Junction-Ambient Symbol RthJA RthCS RthJC 0.5 0.90 Ratings TO-220 62.5 -2.75 ℃/W TO-220F Units Thermal Resistance, Case-to-Sink Typ. Thermal Resistance Junction-Case ■ Electrical Characteristics（TJ=25℃,unless Otherwise specified.） Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Bod...