SVF2N60DTR

SVF2N60M/MJ/NF/F/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF2N60M(MJ)(NF)(F)(D) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES  2A,600V,RDS(on)(typ.)=3.7@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability ORDERING INFORMATION Part No. SVF2N60M SVF2N60MJ SVF2N60NF SVF2N60F SVF2N60DTR Package Type TO-251D-3L TO-251J-3L TO-126F-3L TO-220F-3L TO-252-2L Marking SVF2N60M SVF2N60MJ SVF2N60NF SVF2N60F SVF2N60D Hazardous substance control Halogen free Halogen free Pb free Pb free Halogen free Packing Tube Tube Tube Tube Tape&Reel HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.cn Rev.:3.5 Page 1 of 12 SVF2N60M/MJ/NF/F/D_Datasheet ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted) Characteristics Symbol Drain-Source Voltage Gate-Source Voltage Drain Current TC=25C TC=100C Drain Current Pulsed Power Dissipation(TC=25C) -Derate above 25C Single Pulsed Avalanche Energy(Note1) Operation Junction Temperature Range Storage Temperature Range VDS VGS ID IDM PD EAS TJ...