Silicon Transistor. A2222 Datasheet

A2222 Transistor. Datasheet pdf. Equivalent

A2222 Datasheet
Recommendation A2222 Datasheet
Part A2222
Description PNP Epitaxial Planar Silicon Transistor
Feature A2222; Ordering number : ENA1148 www.DataSheet4U.com 2SA2222 SANYO Semiconductors DATA SHEET 2SA2222 Ap.
Manufacture Sanyo Semicon Device
Datasheet
Download A2222 Datasheet





Sanyo Semicon Device A2222
Ordering number : ENA1148
www.DataSheet4U.com
2SA2222
SANYO Semiconductors
DATA SHEET
2SA2222
PNP Epitaxial Planar Silicon Transistor
High-Current Switching Applications
Applications
Relay drivers, lamp drivers, motor drivers.
Features
Adoption of MBIT process.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Tc=25°C
Conditions
Ratings
--50
--50
--6
--10
--13
--2
2
25
150
--55 to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
32608FA TI IM TC-00001283 No. A1148-1/4



Sanyo Semicon Device A2222
www.DaEtalSehceterti4cUa.lcoCmharacteristics at Ta=25°C
2SA2222
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=--40V, IE=0A
VEB=--4V, IC=0A
VCE=--2V, IC=--270mA
VCE=--10V, IC=--1A
VCB=--10V, f=1MHz
IC=--6A, IB=--300mA
IC=--6A, IB=--300mA
IC=--100μA, IE=0A
IC=--1mA, RBE=
IE=--100μA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Ratings
min typ
150
230
115
--250
--50
--50
--6
40
240
22
max
--10
--10
450
--500
--1.2
Unit
μA
μA
MHz
pF
mV
V
V
V
V
ns
ns
ns
Package Dimensions
unit : mm (typ)
7508-002
10.0
3.2
4.5
2.8
1.6
1.2
0.75 0.7
Switching Time Test Circuit
PW=20μs
D.C.1%
INPUT
IB1
IB2
VR RB
50Ω +
100μF
OUTPUT
+
470μF
RL
VBE=5V
VCC= --20V
IC=20IB1= --20IB2= --5A
123
2.55 2.55
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220ML
IC -- VCE
--10
--80mA
--70mA
--9 --60mA
--8 --50mA
--7
--90mA
--6
--5 --200mA --100mA
--4
--40mA
--30mA
--20mA
--3
--10mA
--2
--1
0 IB=0mA
0 --1 --2 --3 --4 --5
Collector-to-Emitter Voltage, VCE -- V IT13441
--5.0
--4.5
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
0
IC -- VCE
--35mA
--30mA
--25mA
--40mA
--20mA
--45mA
--60mA--50mA
--15mA
--10mA
--80mA
--5mA
IB=0mA
--0.5
--1.0
--1.5
--2.0
Collector-to-Emitter Voltage, VCE -- V IT13442
No. A1148-2/4



Sanyo Semicon Device A2222
www.DataSheet4U.com
--25
--20
--15
--10
--5
0
0
7
5
3
2
100
7
5
3
2
IC -- VBE
2SA2222
VCE= --2V
1000
7
5
3
2
hFE -- IC
Ta=75°C
25°C
--25°C
VCE= --2V
100
7
5
3
2
--0.5
--1.0
--1.5
--2.0
Base-to-Emitter Voltage, VBE -- V IT13443
hFE -- IC
Ta=25°C
10
--0.01 2 3
5
3
5 7--0.1 2 3 5 7--1.0 2 3 5 7 --10
Collector Current, IC -- A
fT -- IC
23 5
IT13444
VCE= --10V
2
100
7
5
3
2
10
--0.01 2 3
7
5
5 7 --0.1 2 3 5 7--1.0 2 3 5 7 --10
Collector Current, IC -- A
Cob -- VCB
23 5
IT13445
f=1MHz
3
2
100
7
5
3
--0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7
Collector-to-Base Voltage, VCB -- V IT13447
VCE(sat) -- IC
5
IC / IB=50
3
2
--1.0
7
5
3
2
--0.1
7
5
Ta=75°C --25°C
3 25°C
2
--0.01
--0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7 --10 2 3
Collector Current, IC -- A
IT13449
10
--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2
Collector Current, IC -- A
VCE(sat) -- IC
3
2 IC / IB=20
3
5 7 --10
IT13446
--1.0
7
5
3
2
--0.1
7
5
3
2
Ta=-7-52°5C°C
--0.01
7
5
--0.01 2 3
5 7 --0.1
23
5 7 --1.0
23
5 7 --10
23
Collector Current, IC -- A
IT13448
VBE(sat) -- IC
3
IC / IB=20
2
--1.0
Ta= --25°C
7
25°C
5 75°C
3
2
--0.01 2 3
5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3
Collector Current, IC -- A
IT13450
No. A1148-3/4





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)