2SC536
2SC536
FEATURES Power dissipation PCM:
TRANSISTOR (NPN)
TO-92
1. EMITTER
400 mW (Tamb=25℃)
2. COLLECTOR 3. ...
2SC536
2SC536
FEATURES Power dissipation PCM:
TRANSISTOR (
NPN)
TO-92
1. EMITTER
400 mW (Tamb=25℃)
2. COLLECTOR 3. BASE 1 2 3
Collector current ICM: 100 mA Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob
unless otherwise specified)
Test conditions MIN 40 30 5 1 1 60 960 0.5 100 3.5 V MHz pF TYP MAX
UNIT
Ic=100µA, IE=0 Ic=1mA, IB=0 IE=100µA, IC=0 VCB=35V, IE=0 VEB=4V, IC=0 VCE=6V, IC=1mA IC=50mA, IB=5mA VCE=6V, IC=1mA VCE=6V, f=1MHz
V V V µA µA
CLASSIFICATION OF hFE Rank Range D 60-120 E 100-200 F 160-320 G 280-560 H 480-960
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:
[email protected]
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