2SC536
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivi...
2SC536
NPN Silicon Epitaxial Planar
Transistor
for switching and AF amplifier applications.
The
transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain.
On special request, these
transistors can be manufactured in different pin configurations.
1. Emitter 2. Collector 3. Base TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25℃)
Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC IB Ptot Tj TS Value 40 30 5 100 50 400 125 -55 to +125 Unit V V V mA mA mW
O O
C C
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Characteristics at Tamb=25 OC
Parameter DC Current Gain at VCE=6V, IC=1mA Current Gain Group O Y G L at VCE=6V, IC=150mA Collector Emitter Saturation Voltage at IC=50mA, IB=5mA Base Emitter Saturation Voltage at IC=50mA, IB=5mA Collector Cutoff Current at VCB=35V Emitter Cutoff Current at VEB=5V Transition Frequency at VCE=10V, IE=1mA Collector Output Capacitance at VCB=10V, f=1MHz Base Intrinsic Resistance at VCB=10V IC=1mA, f=30MHz Noise Figure at VCE=6V, IC=0.1Ma f=1KHz, RG=10KΩ NF 1 10 dB Rbb’ 50 Ω COB 2 3.5 pF fT 100 MHz IEBO 0.1 μA ICBO 0.1 μA VBE(sat) 1.2 V VCE(sat) 0.5 V hFE hFE hFE hFE hFE 70 120 200 350 25 100 140 240 400 700 Symbol Min. Typ. Max. Unit
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