JCS640

R N N-CHANNEL MOSFET JCS640 MAIN CHARACTERISTICS Package ID VDSS Rdson （@Vgs=10V） Qg z z z UPS 18.0 A 200 V 0.18Ω 47 nC APPLICATIONS z High efficiency switch mode power supplies z Electronic lamp ballasts based on half bridge z UPS FEATURES z Low gate charge z Low Crss (typical 48pF ) z Fast switching z 100% avalanche tested z Improved dv/dt capability z RoHS product z z Crss ( 48pF) z z z dv/dt z RoHS ORDER MESSAGE Order codes JCS640C-O-C-N-B JCS640F-O-F-N-B Halogen Free NO NO Device Weight 2.15 g(typ) 2.20 g(typ) Marking JCS640C JCS640F Package TO-220C TO-220MF Packaging Tube Tube ：201007A 1/10 R JCS640 ABSOLUTE RATINGS (Tc=25℃) JCS640C 200 18 11.4 18* 11.4* JCS640F Value Unit V A A Parameter － Drain-Source Voltage Drain Current Symbol VDSS ID T=25℃ T=100℃ IDM -continuous （ 1） Drain Current - pulse （note 1） Gate-Source Voltage （ 2） Single Pulsed Avalanche Energy（note 2） （ 1） Avalanche Current（note 1） （ 1） Repetitive Avalanche Current （note 1） （ 3） Peak Diode Recovery dv/dt （note 3） 72 72* A VGSS ±30 V EAS 259 mJ IAR 18 A EAR 14 mJ dv/dt 5.5 V/ns Power Dissipation PD TC=25℃ -Derate above 25℃ TJ，TSTG 140 44 W 1.12 0.35 W/℃ Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes -55～+150 ℃ TL 300 ℃ * *Drain current limited by maximum junction temperature ：201007A 2/10 R JCS640 Tests conditions Min Typ Max Units Parameter Symbol ELECT...