IRFP4768PbF

PD - 97379 IRFP4768PbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free D G S VDSS RDS(on) typ. max. ID 250V 14.5mΩ 17.5mΩ 93A D G D S TO-247AC G D S Gate Drain Source Absolute Maximum Ratings Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current c Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery e Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Max. 93 66 370 520 3.4 ± 20 24 -55 to + 175 300 10lbfxin (1.1Nxm) 770 See Fig. 14, 15, 22a, 22b Units A W W/°C V V/ns °C Avalanche Characteristics EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy d Avalanche Current c Repetitive Avalanche Energy c mJ A mJ Thermal Resistance Symbol RθJC RθCS RθJA Parameter Junction-to-Case ij Case-to-Sink, Flat Greased Surface Junction-to-Ambient Typ. ––– 0.24 ––– Max. 0.29 ––– 40 Units °C/W www.irf.com 1 02/26/09 IRFP4768PbF Static @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS ∆V(BR)DS...