K12A60D Data Sheet PDF | Toshiba Semiconductor





(Datasheet) K12A60D PDF Download

Part Number K12A60D
Description TK12A60D
Manufacture Toshiba Semiconductor
Total Page 6 Pages
PDF Download Download K12A60D Datasheet PDF

Features: TK12A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK12A60D Switching Regulator Applicat ions Ф3.2 ± 0.2 10 ± 0.3 Unit: mm 2 .7 ± 0.2 A 3.9 3.0 1.14 ± 0.15 2.8 MA X. 2.54 1 2 3 2.6 ± 0.1 0.69 ± 0.15 0.2 M A • • • • Low drain-so urce ON resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittanc e: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 60 0 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Ma ximum Ratings (Ta = 25°C) Characterist ics Drain-source voltage Gate-source vo ltage Drain current DC Pulse (Note 1) ( Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 ±30 12 48 45 359 12 4.5 150 −55 to 150 Unit 2. 54 0.64 ± 0.15 V V A W mJ A mJ °C ° C 13 ± 0.5 15.0 ± 0.3 Drain power dissipation (Tc = 25°C) Single pulse a valanche energy (Note 2) Avalanche curr ent Repetitive avalanche energy (Note 3 ) Channel temperature Storage temperature range 1: Gate 2: Drain 3: Source JEDEC JEITA TOSHIBA ⎯.

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K12A60D datasheet
TK12A60D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS)
TK12A60D
Switching Regulator Applications
Low drain-source ON resistance: RDS (ON) = 0.45 (typ.)
High forward transfer admittance: Yfs= 7.5 S (typ.)
Low leakage current: IDSS = 10 μA (max) (VDS = 600 V)
Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
600
±30
12
48
45
359
12
4.5
150
55 to 150
Unit
V
V
A
W
mJ
A
mJ
°C
°C
Ф3.2 ± 0.2 10 ± 0.3
A
Unit: mm
2.7 ± 0.2
1.14 ± 0.15
0.69 ± 0.15
Ф0.2 M A
2.54 2.54
123
1: Gate
2: Drain
3: Source
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Internal Connection
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
Rth (ch-c)
Rth (ch-a)
Max
2.78
62.5
Unit
°C/W
°C/W
2
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 4.36 mH, RG = 25 Ω, IAR = 12 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1
3
Start of commercial production
2009-01
1 2013-11-01

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