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K12A60D
TK12A60D
Description
TK12A60D TOSHIBA Field Effect
Transistor
Silicon N Channel MOS Type (π-MOSⅦ) TK12A60D Switching
Regulator
Applications Ф3.2 ± 0.2 10 ± 0.3 Unit: mm 2.7 ± 0.2 A 3.9 3.0 1.14 ± 0.15 2.8 MAX. 2.54 1 2 3 2.6 ± 0.1 0.69 ± 0.15 Ф0.2 M A Low drain-source ON resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low l...
Toshiba Semiconductor
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