Document
TK12A60D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK12A60D
Switching Regulator Applications
Ф3.2 ± 0.2 10 ± 0.3
Unit: mm
2.7 ± 0.2 A 3.9 3.0 1.14 ± 0.15 2.8 MAX. 2.54 1 2 3 2.6 ± 0.1 0.69 ± 0.15 Ф0.2 M A
• • • •
Low drain-source ON resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 ±30 12 48 45 359 12 4.5 150 −55 to 150 Unit
2.54 0.64 ± 0.15
V V A W mJ A mJ °C °C
13 ± 0.5
15.0 ± 0.3
Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
1: Gate 2: Drain 3: Source
JEDEC JEITA TOSHIBA
⎯ SC-67 2-10U1B
Weight : 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 2.78 62.5 Unit
Internal Connection
2 °C/W °C/W
Note 1: Please use devices on conditions that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 4.36 mH, RG = 25 Ω, IAR = 12 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution.
1
3
Start of commercial production
2009-01
1
2013-11-01
4.5 ± 0.2
TK12A60D
Electrical Characteristics (Ta = 25°C)
Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge Gate-source charge Gate-drain charge tf toff Qg Qgs Qgd VDD ≈ 400 V, VGS = 10 V, ID = 12 A Duty ≤ 1%, tw = 10 μs Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton 10 V VGS 0V 50 Ω ID = 6 A VOUT VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±30 V, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 6 A VDS = 10 V, ID = 6 A Min ⎯ ⎯ 600 2.0 ⎯ 1.9 ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ 0.45 7.5 1800 9 190 40 80 15 110 38 24 14 Max ±1 10 ⎯ 4.0 0.55 ⎯ ⎯ ⎯ pF Unit μA μA V V Ω S
⎯ ⎯ ⎯ ⎯
VDD ≈ 200 V ⎯ ⎯ ⎯ ⎯
⎯ ⎯ ⎯
ns
RL = 33 Ω
⎯ ⎯
⎯ ⎯ ⎯ nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition ⎯ ⎯ IDR = 12 A, VGS = 0 V IDR = 12 A, VGS = 0 V, dIDR/dt = 100 A/μs Min ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ 1200 13 Max 12 48 −1.7 ⎯ ⎯ Unit A A V ns μC
Marking
Note 4 : A line under a Lot No. identifies the indication of product Labels [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
K12A60D
Part No. (or abbreviation code) Lot No. Note 4
2
2013-11-01
TK12A60D
ID – VDS
10 Common source Tc = 25°C Pulse Test 10 7 8 6.3 6 6 4 5.6 2 VGS = 5.4 V 20 6.5 16 10 7.5 7 8
ID – VDS
Common source Tc = 25°C Pulse Test
8
(A)
(A)
6.7 12 6.5 8 6 4 VGS = 5.6 V
ID
Drain current
Drain current
ID
2 4 6 8 10
0 0
0 0
10
20
30
40
50
Drain-source voltage
VDS
(V)
Drain-source voltage
VDS
(V)
ID – VGS
24 Common source VDS = 10 V Pulse Test 10
VDS – VGS
Common source Tc = 25°C Pulse Test
(V)
8
ID (A)
VDS
18
12
Drain-source voltage
6
ID = 12 A
Drain current
4 6 2 3
100 6 25 Tc = −55°C
0
0
2
4
6
8
10
0
0
4
8
12
16
20
Gate-source voltage
VGS
(V)
Gate-source voltage
VGS
(V)
|Yfs| – ID
100
RDS (ON) – ID
10 Common source Tc = 25°C Pulse Test
Forward transfer admittance ⎪Yfs⎪ (S)
Common source VDS = 10 V Pulse Test
10
Tc = −55°C 25 100
Drain-source ON resistance RDS (ON) (Ω)
1 VGS = 10 V
1
0.