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K12A60D Dataheets PDF



Part Number K12A60D
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description TK12A60D
Datasheet K12A60D DatasheetK12A60D Datasheet (PDF)

TK12A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK12A60D Switching Regulator Applications Ф3.2 ± 0.2 10 ± 0.3 Unit: mm 2.7 ± 0.2 A 3.9 3.0 1.14 ± 0.15 2.8 MAX. 2.54 1 2 3 2.6 ± 0.1 0.69 ± 0.15 Ф0.2 M A • • • • Low drain-source ON resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta .

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TK12A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK12A60D Switching Regulator Applications Ф3.2 ± 0.2 10 ± 0.3 Unit: mm 2.7 ± 0.2 A 3.9 3.0 1.14 ± 0.15 2.8 MAX. 2.54 1 2 3 2.6 ± 0.1 0.69 ± 0.15 Ф0.2 M A • • • • Low drain-source ON resistance: RDS (ON) = 0.45 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 ±30 12 48 45 359 12 4.5 150 −55 to 150 Unit 2.54 0.64 ± 0.15 V V A W mJ A mJ °C °C 13 ± 0.5 15.0 ± 0.3 Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range 1: Gate 2: Drain 3: Source JEDEC JEITA TOSHIBA ⎯ SC-67 2-10U1B Weight : 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 2.78 62.5 Unit Internal Connection 2 °C/W °C/W Note 1: Please use devices on conditions that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 4.36 mH, RG = 25 Ω, IAR = 12 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 1 3 Start of commercial production 2009-01 1 2013-11-01 4.5 ± 0.2 TK12A60D Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge Gate-source charge Gate-drain charge tf toff Qg Qgs Qgd VDD ≈ 400 V, VGS = 10 V, ID = 12 A Duty ≤ 1%, tw = 10 μs Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton 10 V VGS 0V 50 Ω ID = 6 A VOUT VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±30 V, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 6 A VDS = 10 V, ID = 6 A Min ⎯ ⎯ 600 2.0 ⎯ 1.9 ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ 0.45 7.5 1800 9 190 40 80 15 110 38 24 14 Max ±1 10 ⎯ 4.0 0.55 ⎯ ⎯ ⎯ pF Unit μA μA V V Ω S ⎯ ⎯ ⎯ ⎯ VDD ≈ 200 V ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ns RL = 33 Ω ⎯ ⎯ ⎯ ⎯ ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition ⎯ ⎯ IDR = 12 A, VGS = 0 V IDR = 12 A, VGS = 0 V, dIDR/dt = 100 A/μs Min ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ 1200 13 Max 12 48 −1.7 ⎯ ⎯ Unit A A V ns μC Marking Note 4 : A line under a Lot No. identifies the indication of product Labels [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. K12A60D Part No. (or abbreviation code) Lot No. Note 4 2 2013-11-01 TK12A60D ID – VDS 10 Common source Tc = 25°C Pulse Test 10 7 8 6.3 6 6 4 5.6 2 VGS = 5.4 V 20 6.5 16 10 7.5 7 8 ID – VDS Common source Tc = 25°C Pulse Test 8 (A) (A) 6.7 12 6.5 8 6 4 VGS = 5.6 V ID Drain current Drain current ID 2 4 6 8 10 0 0 0 0 10 20 30 40 50 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID – VGS 24 Common source VDS = 10 V Pulse Test 10 VDS – VGS Common source Tc = 25°C Pulse Test (V) 8 ID (A) VDS 18 12 Drain-source voltage 6 ID = 12 A Drain current 4 6 2 3 100 6 25 Tc = −55°C 0 0 2 4 6 8 10 0 0 4 8 12 16 20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| – ID 100 RDS (ON) – ID 10 Common source Tc = 25°C Pulse Test Forward transfer admittance ⎪Yfs⎪ (S) Common source VDS = 10 V Pulse Test 10 Tc = −55°C 25 100 Drain-source ON resistance RDS (ON) (Ω) 1 VGS = 10 V 1 0.


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