Document
MAGNA
TEC
4.69 5.31 1.49 2.49 (0.185) (0.209) (0.059) (0.098) 6.15 (0.242) BSC 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845)
BUZ900P BUZ901P
MECHANICAL DATA Dimensions in mm (inches)
N–CHANNEL POWER MOSFET
POWER MOSFETS FOR AUDIO APPLICATIONS
3.55 (0.140) 3.81 (0.150)
4.50 (0.177) M ax.
1
2
3
1.65 (0.065) 2.13 (0.084) 2.87 (0.113) 3.12 (0.123)
FEATURES
• HIGH SPEED SWITCHING • N–CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE • P–CHANNEL ALSO AVAILABLE AS BUZ905P & BUZ906P
0.40 (0.016) 0.79 (0.031)
19.81 (0.780) 20.32 (0.800) 1.01 (0.040) 1.40 (0.055)
2.21 (0.087) 2.59 (0.102)
5.25 (0.215) BSC
TO–247
Pin 1 – Gate Pin 2 – Source Pin 3 – Drain
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated) VDSX Drain – Source Voltage VGSS ID ID(PK) PD Tstg Tj RθJC Gate – Source Voltage Continuous Drain Current Body Drain Diode Total Power Dissipation Storage Temperature Range Maximum Operating Junction Temperature Thermal Resistance Junction – Case @ Tcase = 25°C BUZ900P 160V ±14V 8A 8A 125W –55 to 150°C 150°C 1.0°C/W BUZ901P 200V
Magnatec.
Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
Prelim. 10/94
MAGNA
TEC
Characteristic
BVDSX BVGSS VGS(OFF) VDS(SAT)* Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Gate – Source Cut–Off Voltage Drain – Source Saturation Voltage
BUZ900P BUZ901P
STATIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Test Conditions
VGS = –10V ID = 10mA VDS = 0 VDS = 10V VGD = 0 BUZ900P BUZ901P IG = ±100µA ID = 100mA ID =8A VDS = 160V IDSX Drain – Source Cut–Off Current VGS = –10V BUZ900P VDS = 200V BUZ901P yfs* Forward Transfer Admittance VDS = 10V ID = 3A 0.7
Min.
160 200 ±14 0.15
Typ.
Max.
Unit
V V
1.5 12 10
V V
mA 10 2 S
DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Characteristic
Ciss Coss Crss ton toff Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn–on Time Turn-off Time
Test Conditions
VDS = 10V f = 1MHz VDS = 20V ID = 5A
Min.
Typ.
500 300 10 100 50
Max.
Unit
pF
ns
* Pulse Test: Pulse Width = 300µs , Duty Cycle ≤ 2%.
150
Derating Chart
125
CH AN NE L D ISS IP ATION (W )
100
75
50
25
0 0 25 50 75 100 125 150
TC — CASE TEMPERATURE (˚C)
Magnatec.
Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
Prelim. 10/94
MAGNA
TEC
9 8 7
I D — D R AIN C U RR EN T (A)
5V
BUZ900P BUZ901P
Typical Output Characteristics
6V
9 8 7
I D — D R AIN C U RR EN T (A)
Typical Output Characteristics
TC = 75˚C
6V
TC = 25˚C
6 5 4 3 2 1 0 0 10 20 30 40 50 60 70 80 90
V DS — DRAIN – SOURCE VOLTAGE (V)
4V
6 5
5V
10
Forward Bias Safe Operating Area
DC
TC = 25˚C
AT
I D — D R AIN C U RR EN T (A)
IO
N
1
G FS — TR AN SC ON DU C TAN CE (S)
= P CH
= P CH
12
5W
4 3 2 1 0 0 10 20
4V
12
5W
3V
3V
2V
2V
30
40
50
60
70
80
90
V DS — DRAIN – SOURCE VOLTAGE (V)
100
V DS = 20V
Transconductance
OP
ER
10
TC = 25˚C TC = 75˚C
0.1
BUZ900 BUZ901
1
160V
0.01 1 10 100
200V
0.1 1000 0 1 2 3 4 5 6 7 8
I D — DRAIN CURRENT (A)
V DS — DRAIN – SOURCE VOLTAGE (V)
Drain – Source Voltage
vs
10
Gate – Source Voltage
TC = 25˚C
9 8 7
I D — D R AIN C UR R EN T (A)
Typical Transfer Characteristics
V DS = 10V TC = 25˚C TC = 75˚C
V DS — DR AIN – S OU RC E V OLTAGE (V )
8
6
TC = 100˚C
6
I D = 6A
5 4 3 2
4
I D = 3A
2
I D = 1A
1 0
0 0 2 4 6 8 10 12 14
V GS — GATE – SOURCE VOLTAGE (V)
0
1
2
3
4
5
6
7
8
V GS — GATE – SOURCE VOLTAGE (V)
Magnatec.
Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
Prelim. 10/94
.