FS8205 MOSFET Datasheet

FS8205 Datasheet, PDF, Equivalent


Part Number

FS8205

Description

Dual N-Channel Enhancement Mode Power MOSFET

Manufacture

Fortune Semiconductor

Total Page 6 Pages
Datasheet
Download FS8205 Datasheet


FS8205
REV. 1.9 FS8205-DS-19_EN
AUG 2016
Datasheet
FS8205
Dual N-Channel Enhancement Mode Power MOSFET

FS8205
Fortune Semiconductor Corporation
富晶電子股份有限公司
23F.,No.29-5, Sec. 2, Zhongzheng E. Rd.,
Danshui Dist, New Taipei City 251, Taiwan
Tel.886-2-28094742
Fax886-2-28094874
www.ic-fortune.com
FS8205
This manual contains new product information. Fortune Semiconductor Corporation reserves the
rights to modify the product specification without further notice. No liability is assumed by Fortune
Semiconductor Corporation as a result of the use of this product. No rights under any patent
accompany the sale of the product
Rev. 1.9
2/2


Features REV. 1.0 FS8205-DS-10_EN AUG 2009 Dat asheet FS8205 Dual N-Channel Enhancem ent Mode Power MOSFET Fo F P r R ro S C ef pe ’ er rti en es ce O nl y FS8 205 Fortune Semiconductor Corporation 28F., No.27, Sec. 2, Zhongzheng E. Rd. , Danshui Town, Taipei County 251, Taiw an Tel.:886-2-28094742 Fax:886-2-28 094874 www.ic-fortune.com This manual contains new product information. Fortu ne Semiconductor Corporation reserves t he rights to modify the product specifi cation without further notice. No liabi lity is assumed by Fortune Semiconducto r Corporation as a result of the use of this product. No rights under any pate nt accompany the sale of the product R ev. 1.0 Fo F P r R ro SC ef pe ’ er rti en es ce O nl y 2/6 FS8205 1. 1. 1 1.1.1 1.1.2 Features Low on-resistan ce RDS(ON) = 25 mΩ MAX. (VGS = 4.5V, I D = 4A) RDS(ON) = 35 mΩ MAX. (VGS = 2. 5V, ID = 3A) 2. Applications „ Li-io n battery management applications 3. Ordering Information Product Number FS8205 4. Pin Assignment S1 D12 S2.
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