Power MOSFET. FS8205 Datasheet

FS8205 MOSFET. Datasheet pdf. Equivalent


Fortune Semiconductor FS8205
REV. 1.9 FS8205-DS-19_EN
AUG 2016
Datasheet
FS8205
Dual N-Channel Enhancement Mode Power MOSFET


FS8205 Datasheet
Recommendation FS8205 Datasheet
Part FS8205
Description Dual N-Channel Enhancement Mode Power MOSFET
Feature FS8205; REV. 1.0 FS8205-DS-10_EN AUG 2009 Datasheet FS8205 Dual N-Channel Enhancement Mode Power MOSFET.
Manufacture Fortune Semiconductor
Datasheet
Download FS8205 Datasheet




Fortune Semiconductor FS8205
Fortune Semiconductor Corporation
富晶電子股份有限公司
23F.,No.29-5, Sec. 2, Zhongzheng E. Rd.,
Danshui Dist, New Taipei City 251, Taiwan
Tel.886-2-28094742
Fax886-2-28094874
www.ic-fortune.com
FS8205
This manual contains new product information. Fortune Semiconductor Corporation reserves the
rights to modify the product specification without further notice. No liability is assumed by Fortune
Semiconductor Corporation as a result of the use of this product. No rights under any patent
accompany the sale of the product
Rev. 1.9
2/2



Fortune Semiconductor FS8205
FS8205
1. Features
1.1 Low on-resistance
1.1.1 RDS(ON) = 28 mΩ MAX. (VGS = 4.5V, ID = 4A)
1.1.2 RDS(ON) = 37 mΩ MAX. (VGS = 2.5V, ID = 3A)
2. Applications
„ Li-ion battery management applications
3. Ordering Information
Product Number Description
FS8205
SOT23-6 package version
4. Pin Assignment
Package Type
SOT23-6
Quantity/Reel
3,000
For FS8205
w : A~Z or A ~ Z
Top points, bottom points & w: Lot no information
5. Absolute Maximum Ratings
Symbol
VDS
VGS
ID @TA = 25
ID @TA = 70
IDM
PD @TA = 25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rev. 1.9
Rating
20
±12
6
5
25
1
0.008
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
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