BSS84AKV

SO T6 BSS84AKV 50 V, 170 mA dual P-channel Trench MOSFET Rev. 1 — 19 May 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 66 1.2 Features and benefits „ Logic-level compatible „ Very fast switching „ Trench MOSFET technology „ ESD protection up to 1 kV „ AEC-Q101 qualified 1.3 Applications „ Relay driver „ High-speed line driver „ High-side loadswitch „ Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = -10 V; Tamb = 25 °C VGS = -10 V; ID = -100 mA; Tj = 25 °C [1] Conditions Tj = 25 °C Min -20 - Typ 4.5 Max Unit -50 20 V V Per transistor -170 mA 7.5 Ω Static characteristics (per transistor) [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm2. NXP Semiconductors BSS84AKV 50 V, 170 mA dual P-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 4 5 6 Pinning information Symbol Description S1 G1 D2 S2 G2 D1 source 1 gate 1 drain 2 source 2 gate 2 drain 1 1 2 3 S1 S2 sym147 Simplified outline 6 5 4 Graphic symbol D1 D2 G1 G2 SOT666 (SOT666) 3. Ordering information Table 3. Ordering information Package Name BSS84AKV SOT666 Description plast...