IRFI4321PBF

PD - 97104 IRFI4321PbF Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching Performance l Improved Diode Recovery Improves Switching & EMI Performance l 30V Gate Voltage Rating Improves Robustness l Fully Characterized Avalanche SOA HEXFET® Power MOSFET VDSS RDS(on) typ. max. ID D 150V 12.2m: 16m: 34A D G G D S S TO-220AB Full-Pak D S G Gate Drain Source Absolute Maximum Ratings Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS (Thermally limited) TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current c Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy d Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Max. 34 21 140 46 0.37 ±30 170 -55 to + 150 300 10lbxin (1.1Nxm) Typ. ––– ––– Max. 2.73 65 Units A W W/°C V mJ °C Thermal Resistance Parameter RθJC RθJA Junction-to-Case f Junction-to-Ambient f Units °C/W www.irf.com 1 6/23/06 IRFI4321PbF Static @ TJ = 25°C (unless otherwise specified) Symbol V(BR)DSS Parameter Drain-to-Source Breakdown Voltage Min. Typ. Max. Units 150 ––– ––– 3.0 ––– ––– ––– ––– ––– ––– 190 12.2 ––– ––– ––– ––– ––– 0.8 ––– 16 5.0 20 1.0 1...