Power MOSFET
PD - 97104
IRFI4321PbF
Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l...
Description
PD - 97104
IRFI4321PbF
Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low RDSON Reduces Losses l Low Gate Charge Improves the Switching Performance l Improved Diode Recovery Improves Switching & EMI Performance l 30V Gate Voltage Rating Improves Robustness l Fully Characterized Avalanche SOA
HEXFET® Power MOSFET
VDSS RDS(on) typ. max. ID
D
150V 12.2m: 16m: 34A
D
G
G
D
S
S
TO-220AB Full-Pak D S
G
Gate
Drain
Source
Absolute Maximum Ratings
Symbol
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS (Thermally limited) TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current c Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy d Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw
Max.
34 21 140 46 0.37 ±30 170 -55 to + 150 300 10lbxin (1.1Nxm) Typ. ––– ––– Max. 2.73 65
Units
A
W W/°C V mJ °C
Thermal Resistance
Parameter
RθJC RθJA Junction-to-Case f Junction-to-Ambient f Units °C/W
www.irf.com
1
6/23/06
IRFI4321PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
150 ––– ––– 3.0 ––– ––– ––– ––– ––– ––– 190 12.2 ––– ––– ––– ––– ––– 0.8 ––– 16 5.0 20 1.0 1...
Similar Datasheet