FJPF1943OTU

FJPF1943 — PNP Epitaxial Silicon Transistor January 2008 FJPF1943 PNP Epitaxial Silicon Transistor Applications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability: IC = -15A. High Power Dissipation : 50watts. High Fequency : 30MHz. High Voltage : VCEO= -230V Wide S.O.A for reliable operation. Excellent Gain Linearity for low THD. Complement to FJPF5200 Full thermal and electrical Spice models are available. Same transistor is also available in: -- TO264 package, 2SA1943/FJL4215 : 150 watts -- TO3P package, 2SA1962/FJA4213 : 130 watts -- TO220 package, FJP1943 : 80 watts 1 TO-220F 2.Collector 3.Emitter 1.Base Absolute Maximum Ratings* Symbol BVCBO BVCEO BVEBO IC IB PD TJ, TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Ta = 25°C unless otherwise noted Parameter Ratings -230 -230 -5 -15 -1.5 50 0.4 - 50 ~ +150 Units V V V A A W W/°C °C Total Device Dissipation(TC=25°C) Derate above 25°C Junction and Storage Temperature * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics* Symbol RθJC * Device mounted on minimum pad size Ta=25°C unless otherwise noted Parameter Thermal Resistance, Junction to Case Ratings 2.5 Units °C/W hFE Classification Classification hFE1 R 55 ~ 110 O 80 ~ 160 © 2008 Fairchild Semiconductor Corporation FJPF1943 Rev. A 1 www.fai...