FJP1943 — PNP Epitaxial Silicon Transistor
November 2008
FJP1943 PNP Epitaxial Silicon Transistor
Applications
• High-...
FJP1943 —
PNP Epitaxial Silicon
Transistor
November 2008
FJP1943
PNP Epitaxial Silicon
Transistor
Applications
High-Fidelity Audio Output Amplifier General Purpose Power Amplifier
Features
High Current Capability: IC = -15A. High Power Dissipation : 80watts. High Frequency : 30MHz. High Voltage : VCEO= -230V Wide S.O.A for reliable operation. Excellent Gain Linearity for low THD. Complement to FJP5200 Full thermal and electrical Spice models are available. Same
transistor is also available in: -- TO264 package, 2SA1943/FJL4215 : 150 watts -- TO3P package, 2SA1962/FJA4213 : 130 watts -- TO220F package, FJPF1943 : 50 watts
1
TO-220 1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings*
Symbol
BVCBO BVCEO BVEBO IC IB PD TJ, TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current
Ta = 25°C unless otherwise noted
Parameter
Ratings
-230 -230 -5 -15 -1.5 80 0.64 - 50 ~ +150
Units
V V V A A W W/°C °C
Total Device Dissipation(TC=25°C) Derate above 25°C Junction and Storage Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics*
Symbol
RθJC
* Device mounted on minimum pad size
Ta=25°C unless otherwise noted
Parameter
Thermal Resistance, Junction to Case
Ratings
1.25
Units
°C/W
hFE Classification
Classification
hFE1
R
55 ~ 110
O
80 ~ 160
© 2008 Fairchild Semiconductor Corporation FJP1943 Rev. B 1
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