NDT01N60

NDD01N60, NDT01N60 N-Channel Power MOSFET 600 V, 8.5 W Features 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Continuous Drain Current RqJC Steady State, TC = 25°C (Note 1) Continuous Drain Current RqJC Steady State, TC = 100°C (Note 1) Pulsed Drain Current, tp = 10 ms Power Dissipation – RqJC Steady State, TC = 25°C Gate−to−Source Voltage Single Pulse Drain−to−Source Avalanche Energy (IPK = 1.0 A) Peak Diode Recovery (Note 2) Source Current (Body Diode) Lead Temperature for Soldering Leads Operating Junction and Storage Temperature Symbol VDSS ID ID IDM PD VGS EAS dv/dt IS TL TJ, TSTG 1.5 260 −55 to +150 1.5 1.0 6.0 46 ±30 13 4.5 0.4 NDD 600 0.4 0.25 1.5 2.5 NDT Unit V A A A W V mJ V/ns A °C °C 4 1 2 3 4 http://onsemi.com V(BR)DSS 600 V RDS(ON) MAX 8.5 W @ 10 V N−Channel MOSFET D (2) G (1) S (3) MARKING DIAGRAMS 4 Drain DPAK CASE 369C STYLE 2 2 1 Drain 3 Gate Source 4 Drain YWW 01 N60G 1 2 3 Gate Drain Source Drain 4 AYW 01N60G G 1 2 3 Gate Drain Source Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Limited by maximum junction temperature 2. IS = 1.5 A, di/dt ≤ 100 A/ms, VDD ≤ BVDSS IPAK C...