NSM80100MT1G

NSM80100MT1G PNP Transistor with Dual Series Switching Diode Features These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications LCD Control Board High Speed Switching High Voltage Switching MAXIMUM RATINGS − PNP TRANSISTOR Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Symbol VCEO VCBO VEBO IC Value −80 −80 −4.0 −500 Unit Vdc Vdc Vdc mAdc http://onsemi.com PNP Transistor with Dual Series Switching Diode 6 D1 5 4 D2 Q1 MAXIMUM RATINGS − SWITCHING DIODE Rating Reverse Voltage Forward Current Non−Repetitive Peak Forward Current (Square Wave, TJ = 25°C prior to surge) t < 1 sec t = 1 msec Operating and Storage Junction Temperature Range Symbol VR IF IFSM 1.0 20 TJ, Tstg −55 to +150 °C Value 100 200 Unit V mA A 4 6 5 1 2 1 2 3 3 SC−74 CASE 318F Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. MARKING DIAGRAM ESD RATINGS Rating Electrostatic Discharge HBM MM Class 3A M4 Value 4000 V ≤ Failure < 8000 V Failure > 400 V 3PN M G 3PN MG G THERMAL CHARACTERISTICS Rating Total Device Dissipation FR−5 Board, (Note 1) @ TA = 25°C Derate above 25°C Thermal Resistance from Junction−to−Ambient (Note 1) Total Device Dissipation FR−5 Board (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−...