NTD5414N

NTD5414N, NVD5414N Power MOSFET 24 A, 60 V Single N−Channel DPAK Features Low RDS(on) High Current Capability Avalanche Energy Specified NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant Applications LED Lighting and LED Backlight Drivers DC−DC Converters DC Motor Drivers Power Supplies Secondary Side Synchronous Rectification MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage − Continuous VGS $20 V Gate−to−Source Voltage − Nonrepetitive (TP < 10 ms) VGS $30 V Continuous Drain Steady TC = 25°C ID Current RqJC State (Note 1) TC = 100°C 24 A 16 Power Dissipation Steady TC = 25°C PD RqJC (Note 1) State 55 W Pulsed Drain Current tp = 10 ms IDM 75 A Operating and Storage Temperature Range TJ, Tstg −55 to °C +175 Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 50 Vdc, VGS = 10 V, IL(pk) = 24 A, L = 0.3 mH, RG = 25 W) Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 Seconds IS 24 A EAS 86.4 mJ TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL R...