NTMFS4985NFT3G

NTMFS4985NF Power MOSFET Features 30 V, 65 A, Single N−Channel, SO−8 FL Integrated Schottky Diode Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free and are RoHS Compliant CPU Power Delivery Synchronous Rectification for DC−DC Converters Low Side Switching Telecom Secondary Side Rectification MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA v 10 sec Power Dissipation RqJA, t v 10 sec Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Current tp=10ms Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TC = 25°C TC = 85°C TC = 25°C TA = 25°C TA = 25°C PD IDM IDmaxpkg TJ, TSTG IS dV/dt EAS PD ID PD ID PD ID Symbol VDSS VGS ID Value 30 ±20 23.9 17.2 3.04 36 26 7.0 17.5 12.6 1.63 65 47 22.73 195 100 −55 to +150 64 6 54 W A A °C A V/ns mJ W A W A 1 http://onsemi.com V(BR)DSS 30 V RDS(ON) MAX 3.4 mW @ 10 V 5.0 mW @ 4.5 V ID MAX 65 A Applications N−CHANNEL MOSFET D Unit V V A G (4) S W A S S S G (1, 2, 3) (5, 6) MARKING DIAGRAM D D 4985NF AYWZZ D D SO−8 FLAT LEAD CASE 488AA STYLE 1 4895NF A Y W ZZ = Specific Device Code = Assembly Locatio...