NTMFS4C09N

MOSFET - Power, Single N-Channel, SO-8FL 30 V, 52 A NTMFS4C09N Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications CPU Power Delivery DC−DC Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) VDSS 30 V VGS ±20 V TA = 25°C ID 16.4 A TA = 80°C 12.3 TA = 25°C PD 2.51 W Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C ID TA = 80°C 25.3 A 19.0 Power Dissipation TA = 25°C PD RqJA ≤ 10 s (Note 1) Steady Continuous Drain State TA = 25°C ID Current RqJA (Note 2) TA = 80°C Power Dissipation RqJA (Note 2) TA = 25°C PD Continuous Drain Current RqJC (Note 1) TC = 25°C ID TC =80°C Power Dissipation RqJC (Note 1) TC = 25°C PD 6.0 W 9.0 A 6.8 0.76 W 52 A 39 25.5 W Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 146 A Current Limited by Package TA = 25°C IDmax 80 A Operating Junction and Storage Temperature TJ, TSTG −55 to °C Range +150 Source Current (Body Diode) Drain to Source dV/dt Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VGS = 10 V, IL = 29 Apk, L = 0.1 mH, RGS = 25 W) (Note 3) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) IS dV/dt EAS ...