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NTMFS5830NL Dataheets PDF



Part Number NTMFS5830NL
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Power MOSFET
Datasheet NTMFS5830NL DatasheetNTMFS5830NL Datasheet (PDF)

NTMFS5830NL Power MOSFET 40 V, 172 A, 2.3 mW Features • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJC (Note 1) Power Diss.

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NTMFS5830NL Power MOSFET 40 V, 172 A, 2.3 mW Features • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Current TA = 25°C TA = 70°C TA = 25°C Steady State TA = 70°C TC = 25°C TC = 70°C TC = 25°C TC = 70°C tp = 10 ms IDM TJ, TSTG IS EAS PD ID PD Symbol VDSS VGS ID Value 40 ±20 28 22 3.2 2.0 172 138 125 80 690 −55 to +150 172 361 A °C A mJ W A W Unit V V A http://onsemi.com V(BR)DSS 40 V RDS(ON) MAX 2.3 mW @ 10 V 3.6 mW @ 4.5 V D (5) ID MAX 172 A G (4) S (1,2,3) N−CHANNEL MOSFET MARKING DIAGRAM D 1 Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V, IL = 85 Apk, L = 0.1 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) DFN5 (SO−8FL) CASE 488AA STYLE 1 A Y W ZZ S S S G 5830NL AYWZZ D D D TL 260 °C = Assembly Location = Year = Work Week = Lot Traceability Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction−to−Case (Drain) (Note 1) Junction−to−Ambient Steady State (Note 1) Junction−to−Ambient Steady State (Note 2) Symbol RqJC RqJA RqJA Value 1.0 39 73 °C/W Unit ORDERING INFORMATION Device NTMFS5830NLT1G Package Shipping† DFN5 1500/Tape & Reel (Pb−Free) 1. Surface−mounted on FR4 board using 1 sq−in pad (Cu area = 1.127 in sq [2 oz] inclusing traces). 2. Surface−mounted on FR4 board using 0.155 in sq (100mm2) pad size. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2012 June, 2012 − Rev. 2 1 Publication Order Number: NTMFS5830NL/D NTMFS5830NL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/ TJ IDSS IGSS VGS(TH) VGS(TH)/TJ RDS(on) gFS CISS COSS CRSS QG(TOT) QG(TH) QGS QGD VGP RG td(ON) tr td(OFF) tf VSD tRR ta tb QRR VGS = 0 V, dIS/dt = 100 A/ms, IS = 60 A TJ = 25°C TJ = 125°C VGS = 4.5 V, VDS = 20 V, ID = 10 A, RG = 2.5 W VGS = 4.5 V, VDS = 32 V; ID = 60 A VGS = 10 V, VDS = 32 V; ID = 60 A VGS = 0 V, f = 1 MHz, VDS = 25 V VGS = 10 V VGS = 4.5 V Forward Transconductance CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge Plateau Voltage Gate Resistance SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VGS = 0 V, IS = 10 A 0.74 0.58 41 19 19 33 nC ns 1.0 V 22 32 40 27 ns 5880 750 500 113 5.5 19.5 32 3.6 0.5 V W nC pF ID = 20 A ID = 20 A VGS = 0 V, VDS = 40 V TJ = 25 °C TJ = 125°C VGS = 0 V, ID = 250 mA 40 32 1 100 ±100 V mV/°C mA nA Symbol Test Condition Min Typ Max Unit Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance VDS = 0 V, VGS = ±20 V VGS = VDS, ID = 250 mA 1.0 7.2 1.7 2.6 38 3.0 V mV/°C 2.3 3.6 mW S VDS = 5 V, ID = 10 A Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTMFS5830NL TYPICAL CHARACTERISTICS 350 300 ID, DRAIN CURRENT (A) 250 200 150 100 50 0 TJ = 25°C 0 1 2 3 4 5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 350 4.2 V 4.0 V 3.8 V 3.6 V 3.4 V VGS = 3.2 V ID, DRAIN CURRENT (A) 300 250 200 150 100 50 0 2 TJ = 25°C TJ = 125°C 3 VDS ≥ 10 V 10 V 5.5 V 4.4 V TJ = −55°C 4 5 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.010 0.008 0.006 0.004 0.002 0.000 0 ID = 20 A TJ = 25°C RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.0035 Figure 2. Transfer Characteristics TJ = 25°C VGS = 4.5 V 0.0030 0.0025 0.0020 0.0015 VGS = 10 V 2 4 6 8 10 0.0010 0 25 50 75 100 125 150 175 VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) Figure 3. On−Resistance vs. Gate−.


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