NTTFS4C05NTAG

NTTFS4C05N Power MOSFET Features 30 V, 75 A, Single N−Channel, m8FL Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com V(BR)DSS 30 V RDS(on) MAX 3.6 mW @ 10 V 5.1 mW @ 4.5 V N−Channel MOSFET ID MAX 75 A Applications DC−DC Converters Power Load Switch Notebook Battery Management MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA ≤ 10 s (Note 1) Power Dissipation RqJA ≤ 10 s (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Current Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TC = 25°C TC = 85°C TC = 25°C TA = 25°C, tp = 10 ms PD IDM TJ, Tstg IS dV/dt EAS PD ID PD ID PD ID Symbol VDSS VGS ID Value 30 ±20 19.4 14.5 2.16 28 21 4.5 12.0 8.9 0.82 75 56 33 174 −55 to +150 30 6.0 84 W A °C A V/ns mJ W A W A W Unit V V A D (5−8) G (4) S (1,2,3) A MARKING DIAGRAM 1 WDFN8 (m8FL) CASE 511AB 4C05 A Y WW G 1 S S S G 4C05 AYWWG G D D D D = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) Operating...