TSC966
NPN Silicon Planar High Voltage Transistor
TO-92
Pin Definition: SOT-223 1. Emitter 2. Collector 3. Base Pin Defi...
TSC966
NPN Silicon Planar High Voltage
Transistor
TO-92
Pin Definition: SOT-223 1. Emitter 2. Collector 3. Base Pin Definition: 1. Base 2. Collector 3. Emitter
PRODUCT SUMMARY
BVCBO BVCEO IC VCE(SAT) 600V 400V 300mA 0.5V @ IC / IB = 50mA / 5mA
Features
● ● High BVceo, BVcbo High current gain
Ordering Information
Part No.
TSC966CT B0 TSC966CT A3 TSC966CW RPG
Package
TO-92 TO-92 SOT-223
Packing
1Kpcs / Bulk 2Kpcs / Ammo 2.5Kpcs / 13” Reel
Structure
● Epitaxial Planar Type
Note: “G” denote for Halogen Free Product
Absolute Maximum Rating (TA=25oC unless otherwise noted)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA=25 C
o
Symbol
VCBO VCES VCEO VEBO DC Pulse TO-92 SOT-223 IC Ptot TJ TSTG
Limit
600 600 400 7 0.3 1 0.9 1 +150 - 55 to +150
Unit
V V V V A W
o o
Operating Junction Temperature Operating Junction and Storage Temperature Range
C C
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Collector-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current Emitter-Base Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Transfer Ratio Transition Frequency Output Capacitance
Conditions
IC = 50uA IC = 100uA, VBE= 0 IC = 1mA IE = 50uA VCB = 600V VCE = 400V VEB = 7V IC = 5...