TSF10H100C

creat by ART TSF10H100C Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition ITO-220AB MECHANICAL DATA Case: ITO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N with suffix "G" on packing code - halogen-free, RoHS compliant Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test Polarity: As marked Mounting torque: 5 in-lbs. max. Weight: 1.7g MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS(TA=25 C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current per device per diode SYMBOL VRRM IF(AV) IFSM IRRM EAS dV/dt VAC MIN. Breakdown voltage ( IR =1.0mA ) Instantaneous forward voltage per diode ( Note2 ) IF = 5A TJ = 25°C TJ = 125°C TJ = 25°C TJ = 100°C VBR VF IR RθJC TJ TSTG 100 TSF10H100C 100 10 5 120 0.5 60 10000 1500 TYP. 4.3 - 55 to +150 - 55 to +150 MAX. 0.8 0.7 100 6 O o UNIT V A A A mJ V/μs V V V μA mA C/W O O Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode Peak repetitive reverse surge current (Note 1) Non-repetitive avalanche energy at L=60mH, per diode Voltag...