TSG25N120CN

TSG25N120CN N-Channel IGBT with FRD. TO-3PN Pin Definition: 1. Gate 2. Collector 3. Emitter PRODUCT SUMMARY VCES (V) 1200 VGES (V) ±20 IC (A) 25 General Description The TSG25N120CN using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven, etc. Features ● ● ● 1200V NPT Trench Technology High Speed Switching Low Conduction Loss Block Diagram Ordering Information Part No. TSG25N120CN C0 Package TO-3PN Packing 30pcs / Tube NPT Trench IGBT Absolute Maximum Rating (TA=25oC unless otherwise noted) Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Current Pulsed Collector Current * Diode Forward Current (TC=100℃) Diode Pulse Forward Current Max Power Dissipation Operating Junction Temperature Storage Temperature Range * Repetitive rating: Pulse width limited by max. junction temperature TJ=25 C TJ=100 C o o Symbol VCES VGES TC=25 C TC=100 C o o Limit 1200 ±20 50 Unit V V A A A A A W IC ICM IF IFM PD TJ TSTG 25 75 25 75 312 125 -55 to +150 -55 to +150 ºC o C 1/9 Version: B12 TSG25N120CN N-Channel IGBT with FRD. Thermal Performance Parameter Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient IGBT DIODE Symbol RӨJC RӨJA Limit 0.4 2.2 40 Unit o C/W Electrical Specifications...