TSM10N80

TSM10N80 800V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 800 1.05 @ VGS =10V ID (A) 9.5 General Description The TSM10N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge. Features ● ● ● Low RDS(ON) 1.05Ω (Max.) Low gate charge typical @ 53nC (Typ.) Improve dv/dt capability Block Diagram Ordering Information Part No. TSM10N80CZ C0 TSM10N80CI C0 Package TO-220 ITO-220 Packing 50pcs / Tube 50pc / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current * Peak Diode Recovery dv/dt (Note 3) Single Pulse Avalanche Energy (Note 2) Avalanche Current (Repetitive) (Note 1) Repetitive Avalanche Energy (Note 1) Operating Junction Temperature Storage Temperature Range * Limited by maximum junction temperature Symbol VDS VGS ID IDM dv/dt EAS IAR EAR TJ TSTG Limit 800 ±30 9.5 38 4.5 267 9.5 29 150 -55 to +150 Unit V V A A V mJ A mJ ºC o C 1/10 Version: B13 TSM10N80 800V N-Channel Power MOSFET Thermal Performanc...